Point Defects in Semiconductors Using Optical Detection of Magnetic Resonance

本项目是利用光学磁共振检测和电子-核双共振光学检测对元素和化合物半导体中的科学和技术要点缺陷进行的实验研究。其中一些缺陷是锌-碲样品在低温下进行电子辐照而产生的。这项工作的另一部分涉及II-VI和III-V半导体中的亚稳态缺陷，如DX和EL2中心。其他正在研究的材料包括富勒烯、分子束外延掺氮锌硒和多孔硅。

This project is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance and optical detection of electron-nuclear double resonance. Some of the defects are produced by electron irradiation of Zinc-Tellurium samples at low temperatures. Another part of the work deals with metastable defects, such as DX and EL2 centers, in II-VI and III-V semiconductors. Other materials being studied are fullerenes, MBE nitrogen-doped Zinc-Selenium and porous silicon.