Point Defects in Semiconductors using Optical Detection of Magnetic Resonance

该计划是一项科学的实验研究， 元素和化合物中技术上重要的点缺陷 利用磁共振的光学检测的半导体 （ODMR）和电子核双共振的光学检测 （ODENDOR）。 半导体中这种缺陷的理论， “深层次”问题，最近取得了令人兴奋的新进展。 本计划中概述的调查是针对 确定标识和微观晶格 缺陷的配置，并绘制出电子和 基态和激发态的电子振动结构 对指导和对抗理论至关重要的信息。 电力和 ODMR和ODENDOR在此类研究中的潜力， 在实验中， 现在的格兰特 在拟议的更新计划中，新的ODMR和 ENDOR实验概述了研究的内在 晶格缺陷（空位，晶体，Frenkel对， 反位等）以及一些更重要的化学物质 杂质和简单的复合物， 交互. 一个新的方向，我们的研究将提供 时间分辨ODMR仪器的研究 发光和能量转移的动力学知之甚少 在这些材料中。

The program is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance (ODMR) and optical detection of electron-nuclear double resonance (ODENDOR). The theory of such defects in semiconductors, the "deep level" problem, has made exciting new advances recently. The investigation outlined in this program is directed toward determining the identification and microscopic lattice configuration of the defects, and mapping out the electronic and vibronic structure in their ground and excited states -- information vital to guide and confront theory. The power and potential of ODMR and ODENDOR for such studies has been demonstrated dramatically by experiments conducted under the present grant. In the proposed renewal program, new ODMR and ENDOR experiments are outlined for the study of the intrinsic lattice defects (vacancies, interstitials, Frenkel pairs, antisites, etc.) as well as some of the more important chemical impurities and simple complexes resulting from their interactions. A new direction to our studies will be afforded by the instrumentation of time-resolved ODMR for the study of the poorly understood dynamics of luminescence and energy transfer processes in these materials.