Point Defects in Semiconductors using Optical Detection of Magnetic Resonance
使用磁共振光学检测半导体中的点缺陷
基本信息
- 批准号:8902572
- 负责人:
- 金额:$ 52.04万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing grant
- 财政年份:1989
- 资助国家:美国
- 起止时间:1989-03-01 至 1992-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The program is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance (ODMR) and optical detection of electron-nuclear double resonance (ODENDOR). The theory of such defects in semiconductors, the "deep level" problem, has made exciting new advances recently. The investigation outlined in this program is directed toward determining the identification and microscopic lattice configuration of the defects, and mapping out the electronic and vibronic structure in their ground and excited states -- information vital to guide and confront theory. The power and potential of ODMR and ODENDOR for such studies has been demonstrated dramatically by experiments conducted under the present grant. In the proposed renewal program, new ODMR and ENDOR experiments are outlined for the study of the intrinsic lattice defects (vacancies, interstitials, Frenkel pairs, antisites, etc.) as well as some of the more important chemical impurities and simple complexes resulting from their interactions. A new direction to our studies will be afforded by the instrumentation of time-resolved ODMR for the study of the poorly understood dynamics of luminescence and energy transfer processes in these materials.
该计划是一项科学的实验研究, 元素和化合物中技术上重要的点缺陷 利用磁共振的光学检测的半导体 (ODMR)和电子-核双共振的光学探测 (ODENDOR)。 半导体中这种缺陷的理论, “深层次”问题,最近取得了令人兴奋的新进展。 本计划中概述的调查是针对 确定标识和微观晶格 缺陷的配置,并绘制出电子和 基态和激发态的电子振动结构 对指导和对抗理论至关重要的信息。 电力和 ODMR和ODENDOR在此类研究中的潜力, 在实验中, 现在的格兰特 在拟议的更新计划中,新的ODMR和 ENDOR实验概述了研究的内在 晶格缺陷(空位,晶体,Frenkel对, 反位等)以及一些更重要的化学物质 杂质和简单的复合物, 交互. 一个新的方向,我们的研究将提供 时间分辨ODMR仪器的研究 发光和能量转移的动力学知之甚少 在这些材料中。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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George Watkins其他文献
Generating a Graph Colouring Heuristic with Deep Q-Learning and Graph Neural Networks
使用深度 Q 学习和图神经网络生成图着色启发式
- DOI:
10.48550/arxiv.2304.04051 - 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
George Watkins;G. Montana;Juergen Branke - 通讯作者:
Juergen Branke
A High Performance Compiler for Very Large Scale Surface Code Computations
用于超大规模表面代码计算的高性能编译器
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:6.4
- 作者:
George Watkins;Hoang Minh Nguyen;Keelan Watkins;Steven Pearce;Hoi;A. Paler - 通讯作者:
A. Paler
Realistic Cost to Execute Practical Quantum Circuits using Direct Clifford+T Lattice Surgery Compilation
使用直接 Clifford T 晶格手术编译执行实用量子电路的实际成本
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Tyler LeBlond;Christopher Dean;George Watkins;R. Bennink - 通讯作者:
R. Bennink
George Watkins的其他文献
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{{ truncateString('George Watkins', 18)}}的其他基金
Intrinsic Defects in Wide Bandgap Semiconductors: Study by Magnetic Resonance Techniques
宽带隙半导体的固有缺陷:磁共振技术研究
- 批准号:
0093784 - 财政年份:2001
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
Study of Point Defects in Semiconductors using Optical Detection of Magnetic Resonance
利用磁共振光学检测研究半导体中的点缺陷
- 批准号:
9704386 - 财政年份:1997
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
Point Defects in Semiconductors Using Optical Detection of Magnetic Resonance
使用磁共振光学检测半导体中的点缺陷
- 批准号:
9204114 - 财政年份:1992
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
The Electronic and Vibronic Structure of Point Defects in Semiconductors Using Optical Detection of Magnetic Resonance(Materials Research)
利用磁共振光学检测研究半导体点缺陷的电子和振动结构(材料研究)
- 批准号:
8520269 - 财政年份:1986
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
The Electronic and Vibronic Structure of Point Defects in Compound Semiconductors Using Optical Detection of Magnetic Resonance (Materials Research)
利用磁共振光学检测研究化合物半导体中点缺陷的电子和振动结构(材料研究)
- 批准号:
8021065 - 财政年份:1981
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
Electronic and Vibronic Structure of Intrinsic Lattice Defects in Compound Semiconductors
化合物半导体中本征晶格缺陷的电子和振动结构
- 批准号:
7711309 - 财政年份:1978
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
Equipment For an Irradiation Facility Centered on a Van De Graaff Accelerator
以范德格拉夫加速器为中心的辐照设施设备
- 批准号:
7612270 - 财政年份:1976
- 资助金额:
$ 52.04万 - 项目类别:
Standard Grant
相似海外基金
Effective use of characteristics of Bi-based III-V compound semiconductors by controlling point defects density inside their crystals grown at low temperatures
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2000 Gordon Conference on Point and Line Defects in Semiconductors, New London, NH, July 9-14, 2000
2000 年戈登半导体点线缺陷会议,新罕布什尔州新伦敦,2000 年 7 月 9-14 日
- 批准号:
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1998 Gordon Research Conference on Point Line Defects in Semiconductors, Colby-Sawyer College, New London, NH, July 12-17, 1998
1998 年戈登半导体点线缺陷研究会议,科尔比-索耶学院,新罕布什尔州新伦敦,1998 年 7 月 12-17 日
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Study of Point Defects in Semiconductors using Optical Detection of Magnetic Resonance
利用磁共振光学检测研究半导体中的点缺陷
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9704386 - 财政年份:1997
- 资助金额:
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Continuing grant
Point Defects in Semiconductors Using Optical Detection of Magnetic Resonance
使用磁共振光学检测半导体中的点缺陷
- 批准号:
9204114 - 财政年份:1992
- 资助金额:
$ 52.04万 - 项目类别:
Continuing grant
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- 批准号:
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