U.S.-Japan Cooperative Research: Atomic Layer Processing of Silicon

该奖项支持美国科罗拉多大学Steven M. George教授和日本广岛大学Masataka Hirose教授为期两年的合作研究项目。本研究涉及对半导体表面反应动力学的研究，以发展硅原子层加工。Hirose教授专注于超大规模集成（ULSI）工艺技术的物理和化学。硅加工的原子层控制是ULSI器件制造的关键需求。单层工艺的控制需要对表面动力学的理解。这个合作项目将汇集两个研究小组在表面动力学和设备制造方面的背景和专业知识。该项目还混合了化学和电气工程学科。PI将访问广濑教授的实验室两次，每次都带着一名研究生一起进行一段较长时间的访问。广濑教授和他的同事们还将访问科罗拉多大学。

This award supports a two-year collaborative research project betweeen Professor Steven M. George of the University of Colorado and Professor Masataka Hirose of Hiroshima University, Hiroshima, Japan. The research involves the study of reaction kinetics on semiconductor surfaces to develop silicon atomic layer processing. Professor Hirose focuses on the physics and chemistry in ultra large scale integration (ULSI) process technology. The atomic layer control of silicon processing is a critical need for ULSI device fabrication. The control of monolayer processing requires an understanding of surface kinetics. This collaborative project will bring together the background and expertise of the two research groups in surface kinetics and device fabrication. The project also mixes the disciplines of chemistry and electrical engineering. The PI will visit Professor Hirose's laboratory twice, each time taking a graduate student with him for an extended period. Professor Hirose and his colleagues will also visit the University of Colorado.