Hot Tunneling Microscopy Study of Epitaxial Growth of Silicon and Germanium on Silicon (100)

9222493将使用热扫描隧道显微镜研究硅、锗/硅分子束外延的GANZ基本方面以及原子表面扩散的细节。所使用的仪器和遵循的实验方法将允许在晶体生长过程中测量原子分辨率成像和电子衍射。将研究温度对薄膜生长动力学的影响，以及直接确定重要的生长参数，包括各向异性扩散、粗化、结合能、台阶速度以及沿台阶边缘的扩散或反射。这些参数将用于在Si(100)衬底上进行同质外延生长，以及在以Sb为表面活性剂的Si(100)上进行Ge异质外延生长。这项研究有望为超大规模集成电路工艺中广泛使用的半导体材料提供新的基础性信息。最先进的表面仪器和方法有望在反应发生时实时揭示表面相互作用的原子尺度特征。所研究的半导体材料在电子和光电子器件中具有广泛的适用性，对其主要材料科学性质的更深入了解有望提高由这些材料制成的器件的性能。新的器件和器件配置可能来自这些研究，以及当前用于计算、信息处理和电信的器件和集成电路的重大改进。***

9222493 Ganz Fundamental aspects of molecular beam epitaxy of silicon, germanium/silicon, and details of surface diffusion of atoms will be studied using hot scanning tunneling microscopy. The instrumentation used and experimental approach followed will allow atomic resolution imaging and electron diffraction to be measured during the crystal growth process. The effects of temperature on the kinetics of film growth, as well as direct determination of important growth parameters including anisotropic diffusion, coarsening, binding energies, step velocity, and diffusion across or reflection from step edges will be studied. These parameters are to be investigated for silicon homoepitaxial growth on Si(100) substrates, and for Ge heteroepitaxial growth on Si(100) with Sb as a surfactant. %%% This research is expected to provide fundamental new information about semiconductor materials which are widely used for VLSI technology. State-of-the-art surface instrumentation and methods are expected to reveal atomic scale features of surface interactions in real time as reactions occur. The semiconductor materials under study have wide applicability in electronic and optoelectronic devices, and a greater understanding of their primary materials science properties is expected to improve the performance of devices made from these materials. New devices and device configurations may result from these studies as well as significant improvements in devices and integrated circuits currently used in computing, information processing, and telecommunications. ***