Deposition of Yttrium Stabilized Zirconia on Silicon to Form Silicon on Insulator Substrates

Spire提出在硅上实现氧化钇立方氧化锆（YSZ）的异质外延生长，该材料可用于硅绝缘体上器件，也可作为铁电和高温衬底超导 材料。因为它能以很小的成本提高当今技术的质量，它的发展可以克服广泛使用绝缘体上硅衬底的主要障碍。金属有机化学气相沉积（MOCVD）将用于在氢钝化硅上沉积YSZ。沉积薄膜的组成和晶体结构将被充分表征。将制造电容器来测量电介质的电性能。第二阶段的研究将继续通过常压CVD在VSZ上生长超导膜、铅锆钛酸盐和外延硅层。

Spire proposes to demonstrate heteroepitaxial growth of yttria cubic zirconia (YSZ) on silicon which can be used for silicon-on- insulator devices and as a substrate for ferroelectric and high temperature superconducting materials. Because it offers potential improvements in quality of today's technologies at a fraction of the cost, its development could overcome a major barrier to widespread use of silicon-on-insulator substrates. Metalorganic chemical vapor deposition (MOCVD) will be used to deposit YSZ on hydrogen-passivated silicon. The deposited films will be fully characterized for composition and crystal structure. Capacitors will be fabricated to measure the electrical properties of the dielectric. Phase II research would go on to demonstrate growth of superconducting films, lead-zirconia-titanate, and epitaxial silicon layers on VSZ by atmospheric pressure CVD.