The Dynamics of Metal Film Growth by Metal Organic Chemical Vapor Deposition

9306899加芬克尔这个项目的目的是了解金属有机化学气相沉积(MOCVD)表面金属覆盖层生长的基本动力学。这项研究包括研究在Si、Ni和SiO_2薄膜上由羰基M(CO)x和三氟膦M(PF3)x前驱体热解沉积过渡金属薄膜的机理。将解决的具体问题是：i)有机金属前驱体如何在不同的底物上相互作用和分解？Ii)在金属薄膜的生长过程中，会出现什么样的微观结构以及它们是如何演变的？三)能预测哪种前驱体适合所需的金属化过程吗？用扫描隧道显微镜(STM)主要研究金属薄膜的生长微结构，结合振动(HREELS)、成分(XPS和AES)和脱附(TDS)光谱研究分解机理和热化学。MOCVD结果将与物理气相沉积(PVD)方法得到的结果进行比较。这项工作的微观结构和热化学结果将大大增加对MOCVD科学的理解，并有助于利用金属薄膜的各种先进材料的应用。***

9306899 Garfunkel The purpose of this project is to understand the basic metal overlayer growth dynamics of metal organic chemical vapor deposition (MOCVD) processes on surfaces. This research includes an examination of the mechanisms involved in the pyrolytic deposition of transition metal films from carbonyl M(CO)x and trifluorophosphine M(PF3)x precursors on Si, Ni, and thin film SiO2. Specific issues that will be addressed are: i) How do organometallic precursors interact and decompose on different substrates? ii) What microscopic structures occur and how do they evolve during the growth of thin metal films? iii) Can one predict which precursor would be appropriate for a desired metallization process? The metal film growth microstructures will be studied primarily by scanning tunneling microscopy (STM), and the decomposition mechanism and thermochemistry by a combination of vibrational (HREELS), compositional (XPS and AES), and desorption (TDS) spectroscopies. MOCVD results will be compared with those obtained by physical vapor deposition (PVD) methods. Both the microstructural and thermochemical results of this work should add significantly to the understanding of the science of MOCVD and to the variety of advanced materials applications which utilize thin metal films. ***