U.S.-Japan Cooperative Research: Optoelectronic Circuit Design and Fabrication
U.S.-Japan Cooperative Research: Optoelectronic Circuit Design and Fabrication
批准号:
9315335
负责人:
Klaus Bachmann
金额:
$3.3万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-04-01 至 1996-12-31
中文摘要
该奖项支持北卡罗来纳州立大学材料科学与工程系Klaus Bachmann教授和日本广岛大学集成系统研究中心Mitsumasa Koyanagi博士之间为期两年的合作研究项目。联合研究将重点开发利用有源和无源光学元件的III-V化合物半导体光电子器件的硅(Si)器件垂直光互连新技术。主要研究以下问题:(1)III-V型光电材料在硅片上的异质外延;(2)硅在III-V型光电异质结构器件上的异质外延;(3)硅和III-V合金的低损伤干刻蚀;(4) Si和III-V的金属触点;(5)无源光学元件,包括波导和介电镜。美国和日本的研究小组已经在开展与综合项目的更广泛目标密切相关的项目,这种互动将在这些项目的基础上建立并提高这些项目的价值。广岛大学的专业知识和设施是纳米制造和光学集成,而北卡罗莱纳州立大学的小组在材料生长,器件加工和材料表征的基础知识方面很强。这些互补的特性将使研究人员能够解决科学和技术研究领域的高级课题,这些课题是任何一个机构都无法单独追求的。这项研究对于成功开发新的并行处理计算机系统概念,如光耦合三维公共存储结构具有重要意义。***
英文摘要
9315335 Bachmann This award supports a two-year collaborative research project between Professor Klaus Bachmann, Department of Materials Science and Engineering, North Carolina State University, and Dr. Mitsumasa Koyanagi, Research Center for Integrated Systems, Hiroshima University, Japan. The joint research will focus on the development of new technologies for vertical optical interconnection of silicon (Si) devices by III-V compound semiconductor optoelectronic devices using active and passive optical components. The following research issues will be addressed: (1) heteroepitaxy of III-V optoelectronic materials on Si chips; (2) heteroepitaxy of Si on III-V optoelectronic heterostructures devices; (3) low-damage dry- etching of Si and III-V's; (4) metal contacts to Si and III-V's; and (5) passive optical components including waveguides and dielectric mirrors. The U.S. and Japanese research groups are already working on projects closely related to the broader goals of the integrated program, and the interactions will build on and enhance the value of these programs. The expertise and facilities at Hiroshima University are in nanofabrication and optical integration, while the North Carolina State University group is strong in fundamental knowledge of materials growth, device processing, and materials characterization. These complementary attributes will permit the researchers to address advanced topics in both scientific and technological research areas that could not be pursued by either institution separately. This research is important for the successful development of new parallel processing computer system concepts such as optically coupled three dimensional common memory structures. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
U.S.-Europe Regional Workshop on Non-Stoichiometry in Semiconductor Heterostructures; Jena, Germany; October 10-14, 1994.
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批准号:9313878
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项目类别:Standard Grant
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资助金额:$1.03万
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财政年份:1994
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负责人:Klaus Bachmann
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依托单位:
Semiconductor Heterostructures: Synthesis, Processing, Characterization and Non-linear Optical Properties
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批准号:9202210
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项目类别:Continuing Grant
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资助金额:$30.74万
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财政年份:1992
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负责人:Klaus Bachmann
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依托单位:
Plasma Enhanced Chemical Vapor Deposition of Epitaxial and Multiple Dielectric Thin Film Structures (Materials Research)
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批准号:8414580
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项目类别:Continuing Grant
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资助金额:$27.73万
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财政年份:1985
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负责人:Klaus Bachmann
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依托单位:
Building/Upgrading of a Plasma Excited Chemical Vapor Deposition System (Materials Research)
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批准号:8414642
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项目类别:Standard Grant
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资助金额:$11.62万
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财政年份:1985
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负责人:Klaus Bachmann
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依托单位:
Purification and Application of Metal Alkyl Compounds in theProcessing of Semiconductors (Materials Research)
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批准号:8210367
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项目类别:Continuing Grant
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资助金额:$25.7万
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财政年份:1982
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负责人:Klaus Bachmann
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依托单位:
海外基金