Semiconductor Heterostructures: Synthesis, Processing, Characterization and Non-linear Optical Properties

半导体异质结构：合成、加工、表征和非线性光学特性

• 批准号: 9202210
• 负责人: Klaus Bachmann
• 金额: $ 30.74万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202210&HistoricalAwards=false
• 关键词: Semiconductor; Heterostructures; Synthesis; Processing; Characterization

ZnSiGeP2 heteroepitaxial films will be grown by chemical beam epitaxy(CBE), and plasma-assisted CBE; SiO2/Si structures, and passivated Si reference surfaces will be synthesized by plasma-assisted processing and wet chemistry techniques for basic investigations of materials synthesis and processing phenomena, and for investigations of nonlinear optical(NLO) effects. The NLO studies will be conducted with ZnGeP2 bulk single crystals and ZnSiGeP2 heteroepitaxial films grown on Si, GaP and SiGe/Si substarates, and at SiO2/Si surfaces. These studies are expected to yield basic information relative to NLO mechanisms, and in particular their dependence on interfacial strain, and interfacial bonding chemistry. This information will then be used as a basis for the design of device structures, which will then be evaluated for potential applications. %%% This research is expected to advance the materials science in synthesis and processing of novel nonlinear optical materials with enhanced properties. This information will form the basis for evaluation of their performance advantages as optoelectronic circuit elements used in advanced computing, information processing, and telecommunications.

ZnSiGeP2异质外延薄膜将通过化学束外延（CBE）和等离子体辅助CBE生长； SiO2/Si结构和钝化Si参考面将通过等离子体辅助加工和湿化学技术合成，用于材料合成和加工现象的基础研究，以及非线性光学（NLO）效应的研究。 NLO 研究将使用在 Si、GaP 和 SiGe/Si 衬底以及 SiO2/Si 表面上生长的 ZnGeP2 块状单晶和 ZnSiGeP2 异质外延膜进行。 这些研究预计将产生与 NLO 机制相关的基本信息，特别是它们对界面应变和界面键合化学的依赖性。 然后，该信息将用作器件结构设计的基础，然后对其潜在应用进行评估。 %%% 这项研究有望推进具有增强性能的新型非线性光学材料的合成和加工方面的材料科学。 这些信息将构成评估其作为先进计算、信息处理和电信中使用的光电电路元件的性能优势的基础。