RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb

这项工作将建立一个研究项目，其目标是探索InSb/AlxIn1-xSb异质外延的材料科学，研究InSb量子阱的电学特性，并开发利用其独特属性的新型电子器件。分子束外延将用于在GaAs和InSb量子阱上沉积InSb和AlxIn1-xSb外延层。由于InSb在所有III-V二元化合物中具有最高的本征电子迁移率，因此InSb量子阱在磁场传感器和晶体管应用中都具有潜在的应用前景。AlxIn1-xSb作为一种合适的阻隔材料，有望成为实现这一潜力的关键一步。＊＊＊

9410015 Santos This work will establish a research program whose objectives are to explore the materials science of InSb/AlxIn1-xSb heteroepitaxy, to study the electrical properties of InSb quantum wells, and to develop novel electron devices which exploit their unique attributes. Molecular beam epitaxy will be used to deposit InSb and AlxIn1-xSb epitaxial layers on GaAs and InSb quantum wells. Since InSb has the highest intrinsic electron mobility of all binary III-V compounds, InSb quantum wells have potential used in both magnetic field sensor and transistor applications. The use of AlxIn1-xSb is expected to be a critical step in fulfilling this potential by serving as a suitable barrier material. ***