Spectroscopic and Electrical Characterization of Buried Oxide Structures

9422369 Zvanut这项工作的目的是在不使器件制造复杂化的情况下测试掩埋氧化物技术的新方法。通过在器件制造之前发现问题，这项工作将提供表征工具来简化新的制造技术。这项研究将检查绝缘体上硅(SOI)晶片中的缺陷，并预测成功运行设备的最佳制造方法。这项工作将集中在Si/SiO_2/Si结构的氧化层中的原子级缺陷及其与电响应的关系上。虽然SOI晶片的顶层硅层是器件运行的关键层，但绝缘氧化物‘衬底’的质量对技术的成功也很重要。例如，有人指出，这一层是造成总剂量翻转和侧向隔离不足的原因。这些问题和相关问题将通过比较埋藏氧化物结构中的缺陷密度和类型来解决，这些缺陷是由特定制造工艺的几种变化产生的。这里将重点介绍的两个过程是薄埋氧化物(小于200 nm)和埋在SiGe层下的氧化物。本研究使用的方法包括各种电学表征技术和电子顺磁共振波谱(EPR)。第一步将是使用诸如电容-电压、电流-电压和电导测量等电学技术来识别埋藏氧化物的电响应中的困难。然后，使用EPR从不同的角度对材料进行检查，重点是点缺陷(原子级缺陷)。这种光谱技术可以在接近电子设备重要浓度的情况下提供有关缺陷的化学信息。这项工作对知识进步的意义在于电子顺磁共振在化学上识别困扰电子材料的问题的能力。这些结果将提供埋层氧化物材料的一般信息；因此，预计本项目的结论和观察将适用于未来一代埋层器件以及今天所研究的那些器件。***

9422369 Zvanut The aim of this work is to test new methods of buried oxide technology without the complication of device fabrication. By identifying problems before device fabrication this work will provide characterization tools to streamline new fabrication techniques. The study will examine defects in silicon-on-insulator (SOI) wafers and predict optimum fabrication methods for successful device operation. The work will concentrate on the atomic level defects in the oxide layer of Si/SiO2/Si structures and their relationship with the electrical response. Although the top Si layer of a SOI wafer is the critical layer for device operation, the quality of the insulating oxide 'substrate' is also important to the success of the technology. For example, it has been pointed out that this layer is responsible for total dose upset and inadequate lateral isolation. These and related problems will be attacked by comparing the defect density and type of defects in buried oxides structures produced by several variations of a specific fabrication process. The two processes which will be highlighted here are thin buried oxides (less than 200nm) and oxides buried underneath SiGe layers. The methods to be used for this study consist of a variety of electrical characterization techniques and electron paramagnetic resonance spectroscopy (EPR). The first step will be to identify the difficulties in the electrical response of the buried oxide using electrical techniques such as capacitance-voltage current-voltage, and conductance measurements. Then, the material will be examined from a different point of view focusing on the point defects (atomic level defects) using EPR. This spectroscopic technique can provide chemical information about the defects at concentrations approaching those important to electronic devices. The significance of this work to the advancement of knowledge lies in the power of EPR to identify chemically the problems which plague electronic materials. These results will provide general information of buried oxide materials; thus, it is expected that the conclusion and observations of this project will apply to the future generation of buried layer devices as well as those studied today. ***