Postdoc: Parallel Multizone Adaptive Scheme for Multiphase Systems with Free and Moving Boundaries

9503988普拉萨德拟议的研究的目的是开发一个并行化的多区域自适应计划的准确和有效的模拟材料的工业过程的重要性。 最终的软件将能够模拟三维瞬态过程，包括热量、质量和物质的扩散和对流，以及辐射传热和熔化/固化，浮力和毛细力引起的流动，以及电场和磁场的影响。 广义控制方程的使用将允许在单个计算域中考虑具有各种相的许多不同材料。 数值格式将采用（a）多区域自适应网格生成（MAGG）技术对任意形状的物理区域进行离散化，以及（B）曲线有限体积（CFV）方法对支配偏微分方程进行离散化并发展有限差分方程。一个有效的并行算法适用于多相系统将开发的基础上，并行分布式存储器MIMD技术，并将利用物理的问题，开发一个域分解策略。 在开发过程中将特别关注负载平衡、通信和元素迁移。 该模型的直接实施将用于硅单晶的CZ和CCZ生长（由NSF和Ferrofluidics Corporation赞助的项目）和磷化铟晶体的一步原位合成和高压MLEK生长（AFOSR项目）。 所提出的并行计算机模型将能够模拟许多种复杂的材料过程，涉及自由和移动的边界，这是不可能的，由目前的技术。

9503988 Prasad The object of the proposed research is to develop a parallelized multizone adaptive scheme for accurate and efficient simulations of materials processes of industrial importance. The final software will be able to simulate three-dimensional transient processes involving diffusion and convection of heat, mass, and species, and radiation heat transfer together with melting/solidification, flows induced by buoyancy and capillary forces, and effects of electrical and magnetic fields. The use of a generalized governing equation will allow consideration of many different materials with various phases in a single computational domain. The numerical scheme will employ (a) the multizone adaptive grid generation (MAGG) technique for the discretization of physical domains of arbitrary shape, and (b) the curvilinear finite-volume(CFV) approach for the discretization of the govening partial differential equations and development of the finite difference equations. An efficient parallel algorithm suitable for multiphase systems will be developed based on the massively-parallel distributed-memory MIMD techniques and will take advantage of the physics of the problem to develop a domain-decomposition strategy. Load balance, communication, and migration of elements will be given special attention in the development. The immediate implementation of this model will be made to the CZ and CCZ growth of silicon single crystals (a project sponsored by NSF and Ferrofluidics Corporation) and one-step in-situ synthesis and high pressure MLEK growth of indium phosphide crystals (an AFOSR project). The proposed parallel computer model will be able to simulate many kinds of complex materials processes involving free and moving boundaries that are not possible by the present techniques.