Electronic Structure of Interfaces, Defects, and Dopants in Wide Band Gap Nitride Semiconductors

这个合作的跨学科研究项目包括通过最先进的回旋加速器共振辅助MBE和离子辅助脉冲激光沉积方法生长的薄膜难熔金属氮化物和立方氮化硼的详细电子结构的全面测定。研究了氮化物中缺陷和掺杂物的电子结构、薄膜与衬底之间以及薄膜与金属覆盖层之间的界面电子结构。此外，将研究薄膜的化学反应性（特别是当有缺陷或掺杂时），以了解基本化学键的性质以及这些氮化物与衬底和覆盖层的粘附性，并了解薄膜在高温下的化学稳定性。电子结构将使用互补光发射、逆光发射和软x射线荧光光谱进行研究。软x射线荧光的优点是可以在外部电场或磁场的存在下以及在高温下确定电子结构，因此该项目将进一步发展软x射线荧光。该计划的主要目标是发展对宽禁带半导体材料的电子和光子特性以及外延生长和加工的基本理解，以便它们可以用于实现各种先进的电子和光子器件。该计划的一个重要特点是在材料和加工研究的基础和技术上具有重要意义的领域培养研究生和本科生。本研究将有助于提高用于计算、信息处理和电信的先进器件和集成电路的总体性能。＊＊＊

9504948 Smith This collaborative, interdisciplinary research project includes a comprehensive determination of detailed electronic structure of thin film refractory metal nitrides and cubic boron nitride grown by state-of-the-art cyclotron resonance-assisted MBE and ion-assisted pulsed laser deposition methods. The electronic structure of defects and dopants in these nitrides, the electronic structure of the interface between the films and their substrates, and between the films and metal overlayers will be studied. Additionally, the chemical reactivity of the films (in particular, when defective or doped) will be investigated in order to understand the nature of elementary chemical bonding and adhesion of these nitrides to both substrates and overlayers, and to understand the chemical stability of the films at elevated temperatures. The electronic structure will be studied using complementary photoemission, inverse photoemission, and soft x-ray fluorescence spectroscopies. Soft x-ray fluorescence will be further developed on the project since it has the advantage that electronic structure can be determined in the presence of external electric or magnetic fields, and at elevated temperatures. %%% The primary goal of this program is to develop a fundamental-understanding of the electronic and photonic properties and the epitaxial growth and processing of wide bandgap semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***