Development of an Inductively-Coupled Plasma Etching and Deposition System for Advanced Material and Device Processing

摘要赵9512152这项建议是为了开发和测试一种用于先进材料和器件加工的感应耦合等离子体刻蚀和沉积系统。将使用100级洁净室，在其中将进行6H-碳化硅和GaN等稳定半导体的刻蚀。这项研究的一个主要目标是就国际比较方案系统最终商业化可能改进的设计向工业伙伴提供反馈和建议。工作将包括建立一个原型电感耦合等离子体系统，评估其蚀刻能力以及与RIE和ECR等其他现有系统的比较。

Abstract Zhao 9512152 This proposal is for the development and testing of an inductively-coupled plasma (ICP) etching and deposition system for advanced material and device processing. A class-100 clean room will be used in which etching of stable semiconductors such as 6H-SiC and GaN among others will be carried out. A major goal of this research is to provide feedback and suggestions to the industrial partner regarding possible improved design for final commercialization of the ICP system. Efforts will include the setting up of a prototype ICP system and evaluate its etching capabilities and its comparison with other available systems such as RIE and ECR.