SBIR Phase I: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photoresist Process for Sub 0.5 Micron Integrated Circuit Manufacture

这个小型企业创新研究（SBIR）第一阶段项目将研究一类新的等离子体沉积有机硅抗蚀剂。 这些将是高度光敏的有机硅氢化物网络材料，其可以在不从真空处理环境中移除的情况下进行光氧化图案化和处理。图像显影通过基于氯的反应离子蚀刻（RIE）完成，留下稳健的负色调SiO2样蚀刻掩模，其允许在单个RIE序列中将图案转移到下面的材料中。 这种方法将允许设备和材料成本的显著降低，并且所提出的等离子体沉积的光敏膜将适用于当前半导体制造的所有阶段以及其它微电子器件。 在平板显示器工业、多芯片模块和光掩模制造中也预期有商业应用。

This Small Business Innovation Reserch (SBIR) Phase I project will investigate a new class of plasma deposited organosilicon resists. These will be highly photosensitive organosilicon hydride network materials, which may be photo-oxidatively patterned and processed without removal from a vacuum processing environment Image development is accomplished by chlorine based reactive ion etch (RIE), leaving a robust, negative tone SiO2-like etch mask that allows pattern transfer into underlying materials in a single RIE sequence. This approach will allow significant reduction in facilities and materials costs, and the proposed plasma deposited photosensitive films will be applicable to all phases of current semiconductor manufacturing and other microelectronic devices as well. Commercial applications are also expected in the flat panel display industry, multi-chip modules, and photomask manufacture.