SBIR Phase II: Diffractive Electrode Structure for on Chip Embedded Passive Components.

这个小企业创新研究二期项目将开发一种调整片上电容器电容的方法。第一阶段的工作展示了一种光学衍射电极结构，该结构允许深紫外线（DUV）辐射穿透到底层电介质中。这被用来精确地调整介电常数和电容。DUV辐射激发光化学反应，改变电容器中间隔材料的介电常数。这个项目，如果成功，将使紧凑，精密的电容器嵌入芯片，以取代外部分立电容器在电路中。在相同的制造过程中移动芯片上的无源元件可以减少制造工作量。通过用电阻修整设备精确地修整电学值，可以实现制造过程的显著简化。第二阶段的成功结果将导致分子工程纳米复合材料的演示，用于毫米波和微波单片集成电路，可以通过光导调谐到精确值，从而在芯片上嵌入精密电容器。该技术的结合可以减少各种高频应用的尺寸和成本。

This Small Business Innovation Research Phase II project will develop a method for tuning the capacitance of on-chip capacitors. The Phase I effort demonstrated an optical diffractive electrical electrode structure that permits the penetration of deep ultra-violet (DUV) radiation into an underlying dielectric. This was used to precisely tune dielectric constant and capacitance. The DUV radiation incites a photochemical reaction altering the dielectric constant of the spacer material in the capacitor. This project, if successful, will enable compact, precision capacitors embedded on chip to replace external discrete capacitors in electrical circuits. Moving passive components on chip in the same fabrication process is a reduction of manufacturing effort. By precisely trimming electrical values with resistor trimming equipment a significant simplification of the manufacturing process may be achieved. The successful results of Phase II will result in the demonstration of a molecularly engineered nanocomposite for use in millimeter and micro wave monolithic integrated circuits that can be photo-optically tuned for precise value to embed precision capacitors on chip. Incorporation of this technology can result in reduced size and cost for a wide variety of high frequency applications.