SBIR Phase II: Diffractive Electrode Structure for on Chip Embedded Passive Components.

这个小型企业创新研究第二阶段项目将开发一种调整片上电容器电容的方法。第一阶段的努力证明了一种光学衍射电极结构，允许深紫外（DUV）辐射穿透到下面的电介质。这是用来精确地调整介电常数和电容。DUV辐射激发光化学反应，改变电容器中间隔物材料的介电常数。该项目如果成功，将使芯片上嵌入的紧凑型精密电容器能够取代电路中的外部分立电容器。在相同的制造工艺中移动芯片上的无源元件减少了制造工作。通过用电阻器微调设备精确地微调电气值，可以实现制造过程的显著简化。第二阶段的成功结果将导致分子工程纳米复合材料的演示，用于毫米波和微波单片集成电路，可以进行光电调谐，以获得精确的值，从而在芯片上嵌入精密电容器。该技术的结合可以导致用于各种高频应用的减小的尺寸和成本。

This Small Business Innovation Research Phase II project will develop a method for tuning the capacitance of on-chip capacitors. The Phase I effort demonstrated an optical diffractive electrical electrode structure that permits the penetration of deep ultra-violet (DUV) radiation into an underlying dielectric. This was used to precisely tune dielectric constant and capacitance. The DUV radiation incites a photochemical reaction altering the dielectric constant of the spacer material in the capacitor. This project, if successful, will enable compact, precision capacitors embedded on chip to replace external discrete capacitors in electrical circuits. Moving passive components on chip in the same fabrication process is a reduction of manufacturing effort. By precisely trimming electrical values with resistor trimming equipment a significant simplification of the manufacturing process may be achieved. The successful results of Phase II will result in the demonstration of a molecularly engineered nanocomposite for use in millimeter and micro wave monolithic integrated circuits that can be photo-optically tuned for precise value to embed precision capacitors on chip. Incorporation of this technology can result in reduced size and cost for a wide variety of high frequency applications.