SBIR Phase II: Diffractive Electrode Structure for on Chip Embedded Passive Components.

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This Small Business Innovation Research Phase II project will develop a method for tuning the capacitance of on-chip capacitors. The Phase I effort demonstrated an optical diffractive electrical electrode structure that permits the penetration of deep ultra-violet (DUV) radiation into an underlying dielectric. This was used to precisely tune dielectric constant and capacitance. The DUV radiation incites a photochemical reaction altering the dielectric constant of the spacer material in the capacitor. This project, if successful, will enable compact, precision capacitors embedded on chip to replace external discrete capacitors in electrical circuits. Moving passive components on chip in the same fabrication process is a reduction of manufacturing effort. By precisely trimming electrical values with resistor trimming equipment a significant simplification of the manufacturing process may be achieved. The successful results of Phase II will result in the demonstration of a molecularly engineered nanocomposite for use in millimeter and micro wave monolithic integrated circuits that can be photo-optically tuned for precise value to embed precision capacitors on chip. Incorporation of this technology can result in reduced size and cost for a wide variety of high frequency applications.