SBIR Phase I: Diffractive Electrode Structure for on Chip Embedded Passive Components.

SBIR 第一阶段：片上嵌入式无源元件的衍射电极结构。

• 批准号: 0539928
• 负责人: Ronald Kubacki
• 金额: --
• 依托单位: IONIC SYSTEMS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2007-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539928&HistoricalAwards=false
• 关键词: SBIR; Phase; Diffractive; Electrode; Structure

This Small Business Innovation Research (SBIR) Phase I project will develop an optically diffractive electrical electrode structure. This structure will permit the penetration of deep ultraviolet radiation into an underlying dielectric in a capacitance device. The radiation will permit a photochemical reaction to take place altering the dielectric constant of the material under the electrode. This will allow an optical process, the deep UV exposure, to alter the electrical value of the capacitor while the circuit is under test. Compact, precision capacitors can be embedded on chip in place of external discrete capacitors for use in producing completed electrical circuits. The higher precision and on chip embedding of these passive components will reduce the size of the electrical system, providing increased performance through precise value tolerance, and reduce cost by performing the integration of passive capacitors during integrated circuit fabrication.Commercially, the demand for embedded passive components is well established. Recent market reports published in February 2005 show a global passive market increasing 8.6% in 2004 to $12.4 Billion. In 2002 Nokia reported passives are 80% percent of the part count in a cell phone, utilizing 60%of the area and represent 20% of the material cost. Solid-State Technology reported that passive components can account for 70% of the product assembly costs. The ability to embed precision passive components, particularly capacitors, has large economic potential for fabricators of ultra portable electronics, such as cell phones, by dramatically reducing manufacture costs and increasing performance.

这个小型企业创新研究(SBIR)第一阶段项目将开发一种光学衍射式电极结构。这种结构将允许深紫外光穿透到电容设备的底层介质中。辐射将允许发生光化学反应，改变电极下材料的介电常数。这将允许光学过程，即深度紫外线曝光，在电路测试期间改变电容器的电气值。紧凑、精密的电容器可以嵌入芯片中，代替外部分立电容器，用于生产完整的电路。这些无源元件的更高精度和片上嵌入将减小电气系统的尺寸，通过精确的数值容差提供更高的性能，并通过在集成电路制造过程中执行无源电容器的集成来降低成本。2005年2月发布的最新市场报告显示，2004年全球被动市场增长8.6%，达到124亿美元。2002年，诺基亚报告称，被动件占手机零部件数量的80%，占手机总面积的60%，占材料成本的20%。Solid-State Technology报告称，无源组件可以占到产品组装成本的70%。嵌入精密无源元件，特别是电容器的能力，通过显著降低制造成本和提高性能，对手机等超便携电子产品的制造商具有巨大的经济潜力。