SBIR Phase I: Novel Low Dielectric Constant Materials

SBIR 第一阶段：新型低介电常数材料

• 批准号: 9661312
• 负责人: Ronald Kubacki
• 金额: $ 7.49万
• 依托单位: IONIC SYSTEMS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9661312&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Low; Dielectric

*** ABSTRACT 9661312 Kubachi This Small Business Innovation Research Phase I project will investigate plasma polymerized materials based on organosilicon synthesis for producing a new class of low-k dielectrics. This all-plasma-deposited low-k dielectric could provide a strong competitive advantage in both cost and performance. The semiconductor industry's need for an insulating material with a low-k dielectric constant arises from the fact that chip speed is limited by the resistance of the metal line and the surrounding insulator. Dielectrics today have a constant of 4 to 3.2. Higher chip speeds require a switch to a new type of material, very possibly a plastic-like organic. Such materials could reduce dielectric constants to 2.0 or lower. The push for low-k dielectric materials is motivated by a desire to reduce capacitance. Reducing capacitance also minimizes crosstalk between adjacent metal lines, an increasingly severe problem. The US market for low-k dielectrics is estimated to be 2 billion dollars by the year 2000. Low-k dielectrics are applicable to a broad spectrum of applications sensitive to ever finer geometries, crosstalk and higher frequencies. Prime candidates for a new class of low-k- materials are: IC manufacture to enable faster devices; high density MCMs with high density interconnects and less crosstalk for computers; and high frequency devices used in the telecommunications industry by allowing greater design latitutde and better performance on high frequency devices. ***

*摘要9661312库巴奇这个小型企业创新研究第一阶段项目将研究基于有机硅合成的等离子聚合材料，以生产一类新的低k电介质。这种全等离子沉积的低k电介质在成本和性能上都具有很强的竞争优势。半导体行业对具有低k介电常数的绝缘材料的需求源于这样一个事实：芯片速度受到金属线和周围绝缘体的电阻的限制。如今，电介质的常数在4到3.2之间。更高的芯片速度需要切换到一种新类型的材料，很可能是类似塑料的有机材料。这种材料可以将介电常数降低到2.0或更低。对低k介电材料的推动是出于减少电容的愿望。减小电容还可以最大限度地减少相邻金属线之间的串扰，这是一个日益严重的问题。据估计，到2000年，美国的低k电介质市场将达到20亿美元。Low-k介质适用于对更精细的几何形状、串扰和更高频率敏感的广泛应用。新一类低k材料的主要候选者是：支持更快器件的IC制造；具有高密度互连和更低计算机串扰的高密度MCM；以及在电信行业中使用的高频器件，因为它允许更大的设计自由度和更好的高频器件性能。***