SBIR Phase II: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photo-Resist Process for Sub 0.5 Micron Integrated Circuit Manufacture
SBIR Phase II: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photo-Resist Process for Sub 0.5 Micron Integrated Circuit Manufacture
批准号:
9710670
负责人:
Ronald Kubacki
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-01-15 至 1999-12-31
中文摘要
*** 9710670 Kubacki这个小企业创新研究二期项目继续开发多组分沉积工艺,重点是材料筛选和有机捐赠者的开发,以实现所需的灵敏度和选择性,使用安全的材料,这将很容易集成到半导体生产设施中。将研究多组分鸡尾酒以优化薄膜性能并增加工艺自由度。第一阶段展示了一种新型的高度光敏,低于0.5微米的等离子沉积有机硅电阻。这些抗蚀剂可以在不从真空处理环境中移除的情况下进行光氧化图案和加工,从而减少环境暴露,使用更少的材料,使用更安全的材料,并产生更少的废物。通过氯基反应离子草图(RIE)完成的图像开发可能会延迟,没有退化,并留下一个坚固的,负色调的二氧化硅(SiO2)样蚀刻掩膜,允许在单个RIE序列中将图案转移到底层材料中,第一阶段开发的关系将得到加强,并寻求新的联盟以及营销设备和工艺的资源。将选择示范车辆,并与设备制造商作出安排,使用全干法加工制造一个或多个功能设备。该工艺对集成电路(IC)、微机械、显示器、模块、光掩模具有技术和经济效益。***
英文摘要
*** 9710670 Kubacki This Small Business Innovation Research Phase II Project continues development of a multi-component deposition process, with focus on materials screening and development of organic donors to achieve required sensitivity and selectivity using safe materials which will integrate easily into semiconductor production facilities. Multiple component cocktails will be investigated to optimize film properties and increase process latitude. Phase I demonstrated a new class of highly photosensitive, sub 0.5 micron plasma deposited organosilicon resists. These resists may be photo-oxidatively patterned and processed without removal from a vacuum processing environment, thereby reducing environmental exposure, using less material, using safer material, and creating less waste. Image development may be delayed with no degradation and is accomplished by chlorine based reactive ion sketch (RIE) leaving a robust, negative tone silicon dioxide (SiO2)-like etch mask that allows pattern transfer into underlying materials in a single RIE sequence Relationships developed in Phase I will be strengthened and new alliances sought as will resources to market the equipment and process. A demonstration vehicle will be selected and arrangements made with device manufacturers to make one or more functional devices using the all dry processing. This process has technical and economic benefits for integrated circuits (IC's), micro-machines, displays, modules, photo masks. ***
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批准号:0740552
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2008
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负责人:Ronald Kubacki
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批准号:0539928
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财政年份:2006
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财政年份:1997
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负责人:Ronald Kubacki
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依托单位:
SBIR Phase I: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photoresist Process for Sub 0.5 Micron Integrated Circuit Manufacture
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项目类别:Standard Grant
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资助金额:$7.49万
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财政年份:1996
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负责人:Ronald Kubacki
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依托单位:
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