SBIR Phase II: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photo-Resist Process for Sub 0.5 Micron Integrated Circuit Manufacture

SBIR 第二阶段：用于 0.5 微米以下集成电路制造的等离子沉积、环保、深紫外、干式光刻胶工艺

• 批准号: 9710670
• 负责人: Ronald Kubacki
• 金额: $ 30万
• 依托单位: IONIC SYSTEMS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-01-15 至 1999-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9710670&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Plasma; Deposited

*** 9710670 Kubacki This Small Business Innovation Research Phase II Project continues development of a multi-component deposition process, with focus on materials screening and development of organic donors to achieve required sensitivity and selectivity using safe materials which will integrate easily into semiconductor production facilities. Multiple component cocktails will be investigated to optimize film properties and increase process latitude. Phase I demonstrated a new class of highly photosensitive, sub 0.5 micron plasma deposited organosilicon resists. These resists may be photo-oxidatively patterned and processed without removal from a vacuum processing environment, thereby reducing environmental exposure, using less material, using safer material, and creating less waste. Image development may be delayed with no degradation and is accomplished by chlorine based reactive ion sketch (RIE) leaving a robust, negative tone silicon dioxide (SiO2)-like etch mask that allows pattern transfer into underlying materials in a single RIE sequence Relationships developed in Phase I will be strengthened and new alliances sought as will resources to market the equipment and process. A demonstration vehicle will be selected and arrangements made with device manufacturers to make one or more functional devices using the all dry processing. This process has technical and economic benefits for integrated circuits (IC's), micro-machines, displays, modules, photo masks. ***

* 9710670 Kubacki 该小型企业创新研究第二阶段项目继续开发多组分沉积工艺，重点是材料筛选和有机供体的开发，以使用安全的材料实现所需的灵敏度和选择性，这些材料易于集成到半导体生产设施中。 将研究多组分鸡尾酒，以优化薄膜性能并增加工艺宽容度。 第一阶段展示了一种新型的高感光性，亚0.5微米等离子体沉积的有机硅抗蚀剂。 这些抗蚀剂可以在不从真空处理环境中移除的情况下被光氧化图案化和处理，从而减少环境暴露，使用更少的材料，使用更安全的材料，并且产生更少的废物。 图像显影可以延迟而没有退化，并且通过基于氯的反应离子素描（RIE）完成，留下一个 一种稳健的、负性的二氧化硅（SiO2）类蚀刻掩模，允许在单个RIE序列中将图案转移到底层材料中 将加强在第一阶段发展的关系，并寻求新的联盟，以及销售设备和工艺的资源。 将选择示范车辆，并与设备制造商安排使用全干法处理制造一个或多个功能设备。 该工艺对于集成电路（IC）、微机械、显示器、模块、光掩模具有技术和经济效益。 ***