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U.S.-Japan Joint Seminar: Formation of Ion Nanobeams and Application to Material Processing

U.S.-Japan Joint Seminar: Formation of Ion Nanobeams and Application to Material Processing
美日联合研讨会:离子纳米束的形成及其在材料加工中的应用
批准号:
9603429
负责人:
John Melngailis
金额:
$2.07万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-04-01 至 1999-03-31

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中文摘要
翻译
小行星9603429 该奖项支持美国科学家/工程师参与美国- 1997年11月16日至21日在日本奈良举行的关于离子纳米束的形成及其在材料加工中的应用的日本研讨会。 协办者是马里兰州大学的约翰·马恩盖利斯教授和日本大坂大学的甘茂健二。 本次研讨会将讨论与离子束及其在材料加工中的应用有关的广泛主题,包括离子源和光学,离子束辐照效应,纳米纤维,聚焦离子束在无掩模器件加工中的应用,以及离子束在微量分析中的应用。 聚焦离子束现在广泛应用于集成电路工业,用于在故障分析期间精确地分割集成电路中的单个组件,用于在原型阶段期间重新布线集成电路,以及用于修复掩模。 随着集成电路最小尺寸的缩小,离子微束将需要显著的进步来继续发挥这些功能。 此外,目前的研究可能导致新的应用在微机械加工和半导体器件制造。在精细聚焦离子束领域的主要实际发展发生在美国和日本。 该研讨会汇集了来自大学和工业界的研究人员。 与日本专家在这一领域的想法和数据交流将使美国参与者能够推进自己的工作,并为未来的合作项目奠定基础。 ***
英文摘要
9603429 Melngailis This award supports the participation of American scientists/engineers in a U.S.-Japan seminar on Formation of Ion Nanobeams and Applications to Materials Processing to be held in Nara, Japan from November 16-21, 1997. The co- organizers are Professors John Malngailis of the University of Maryland and Kenji Gamo of Osaka University in Japan. This seminar will address a broad range of topics related to ion beams and their application to materials processing, including ion sources and optics, ion beam irradiation effects, nanofabrication, application of focused ion beams to maskless device processing, and the use of ion beams for microanalysis. %%% Focused ion beams are now widely used in the integrated circuits industry for precisely sectioning individual components in integrated circuits during failure analysis, for rewiring integrated circuits during the prototyping phase, and for repair of masks. As minimum dimensions in integrated circuits shrink, significant advances will be needed for ion microbeams to continue to serve these functions. In addition, present research may lead to new applications in micromachining and semiconductor devise fabrication. The main practical developments in the area of finely focused ion beams have occurred in the United States and Japan. This seminar brings together researchers from both universities and industry. The exchange of ideas and data with Japanese experts in this field will enable U.S. participants to advance their own work, and will set the stage for future collaborative projects. ***
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会议论文
Ion Induced Microprocessing
"Focused Ion Beam Implantation of GaAs Integrated Circuits"
US-Japan Joint Seminar: Focused Ion Beam Process / Osaka, Japan / November, 1987
Coupling of Surface Acoustic Waves in Gratings to Bulk PlateModes -- Properties and Applications
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