"Focused Ion Beam Implantation of GaAs Integrated Circuits"

《砷化镓集成电路的聚焦离子束注入》

• 批准号: 8921728
• 负责人: John Melngailis
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-04-15 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8921728&HistoricalAwards=false
• 关键词: Focused; Ion; Beam; Implantation; GaAs

The proposed research, a collaboration between MIT and Raytheon Research Laboratories, is aimed at applying focused ion beam implantation to high performance GaAs integrated circuits. Since microwave and millimeter wave monolithic circuits (MMIC's) often have a variety of high performance devices on each chip, we will particularly focus on this class of circuits. The research will have three main components: a) integration of the focused ion beam into MMIC fabrication including verification of registration and of equivalence with conventional implantation; b) demonstration of the focused ion beam for prototyping of MMIC's by the implantion of a large variety of doses and energies in one step and; c) fabrication of high performance FET's by special implanted structures, i.e. variation also of the implant geometry within a device; d) implantation of complete MMIC.

这项拟议的研究是麻省理工学院和雷神研究实验室的合作项目，旨在将聚焦离子束注入应用于高性能砷化镓集成电路。由于微波和毫米波单片电路(MMIC)通常在每个芯片上都有各种高性能器件，因此我们将特别关注这类电路。这项研究将有三个主要组成部分：a)将聚焦离子束集成到MMIC制造中，包括验证注册和与传统注入的等效性；B)通过在一步中注入多种剂量和能量来演示用于MMIC原型的聚焦离子束，以及c)通过特殊的注入结构来制造高性能的FET，即改变器件内的注入几何形状；D)植入完整的MMIC。