Ion Induced Microprocessing

离子诱导微加工

• 批准号: 9202633
• 负责人: John Melngailis
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-10-01 至 1996-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202633&HistoricalAwards=false
• 关键词: Ion; Induced; Microprocessing

The goal of this research is to understnd the fundamental features of ion induced surface reactions in focused ion beam microfabrication, and of the materials and surfaces that are produced by the resulting deposition or etching. This will be accomplished by bringing to bear expertise from chemical engineering, materials science, and microfabrication technology. In the case of the deposition, understanding of the basic process is expected to point to ways of eliminating unwanted carbon impurities, for example, by the addition of a second, appropriately reactive, precursor gas or an atomic beam. Eliminating or significantly reducing the impurities in the deposited material would be a major breakthrough. The reduced resistivity and increased density would immediately make focused ion beam device and circuit repair processes more effective and open the door to new applications of maskless, resistless, patterned conductor deposition by projection ion techniques and to in situ processing. %%% Ion induced deposition and ion assisted etching are new processes for material addition and removal. Since ion beams can be focused to extremely small dimensions (0.05 microns and below), this permits material manipulation with unprecedented resolution and flexibility and has spawned commercial applications in micro- repair of integrated circuits and in microsectioning for fault diagnosis. By developing a better understanding of the mechanisms of these new processes, and by extending them to new materials, the proposed research work aims to broaden the applications to the deposition of the original wiring of future ultrafast integrated circuits.

本研究的目的是了解聚焦离子束微加工中离子诱导表面反应的基本特征，以及由此产生的沉积或蚀刻产生的材料和表面。这将通过化学工程、材料科学和微加工技术的专业知识来实现。在沉积的情况下，对基本过程的理解有望指出消除不需要的碳杂质的方法，例如，通过添加第二种适当的反应性前体气体或原子束。消除或显著减少沉积材料中的杂质将是一项重大突破。电阻率的降低和密度的增加将立即使聚焦离子束设备和电路修复过程更加有效，并通过投影离子技术和原位处理为无掩膜、无电阻、有图案的导体沉积的新应用打开大门。离子诱导沉积和离子辅助蚀刻是材料添加和去除的新工艺。由于离子束可以聚焦到极小的尺寸（0.05微米及以下），这使得材料操作具有前所未有的分辨率和灵活性，并在集成电路的微修复和故障诊断的微切片中产生了商业应用。通过更好地理解这些新工艺的机制，并将其扩展到新材料，提出的研究工作旨在扩大应用到未来超快集成电路原始布线的沉积。