SBIR Phase I: Novel Low Dielectric Constant Materials

* 摘要 小行星9661312 这个小企业创新研究第一阶段项目将研究基于有机硅合成的等离子体聚合材料，用于生产新型低k材料。这种全等离子体沉积的低k电介质可以在成本和性能方面提供强大的竞争优势。半导体工业对具有低k介电常数的绝缘材料的需求源于芯片速度受金属线和周围绝缘体的电阻限制的事实。今天的电介质常数是4到3.2。 更高的芯片速度需要切换到一种新的材料，很可能是一种类似塑料的有机材料。这种材料可以将介电常数降低到2.0或更低。对低k电介质材料的推动是由减小电容的期望所激发的。减小电容还可以最大限度地减少相邻金属线之间的串扰，这是一个日益严重的问题。 到2000年，美国低钾钙的市场估计将达到20亿美元。低k电容器适用于对更精细的几何形状、串扰和更高频率敏感的广泛应用。新一类低k材料的主要候选者是：IC制造，以实现更快的器件;具有高密度互连和更少串扰的高密度MCM用于计算机;以及用于电信行业的高频器件，允许更大的设计纬度和更好的高频器件性能。***

*** ABSTRACT 9661312 Kubachi This Small Business Innovation Research Phase I project will investigate plasma polymerized materials based on organosilicon synthesis for producing a new class of low-k dielectrics. This all-plasma-deposited low-k dielectric could provide a strong competitive advantage in both cost and performance. The semiconductor industry's need for an insulating material with a low-k dielectric constant arises from the fact that chip speed is limited by the resistance of the metal line and the surrounding insulator. Dielectrics today have a constant of 4 to 3.2. Higher chip speeds require a switch to a new type of material, very possibly a plastic-like organic. Such materials could reduce dielectric constants to 2.0 or lower. The push for low-k dielectric materials is motivated by a desire to reduce capacitance. Reducing capacitance also minimizes crosstalk between adjacent metal lines, an increasingly severe problem. The US market for low-k dielectrics is estimated to be 2 billion dollars by the year 2000. Low-k dielectrics are applicable to a broad spectrum of applications sensitive to ever finer geometries, crosstalk and higher frequencies. Prime candidates for a new class of low-k- materials are: IC manufacture to enable faster devices; high density MCMs with high density interconnects and less crosstalk for computers; and high frequency devices used in the telecommunications industry by allowing greater design latitutde and better performance on high frequency devices. ***