SBIR Phase I: Plasma Deposited, Environmentally Friendly, Deep UV, Dry Photoresist Process for Sub 0.5 Micron Integrated Circuit Manufacture

SBIR 第一阶段：用于 0.5 微米以下集成电路制造的等离子沉积、环保、深紫外、干式光刻胶工艺

• 批准号: 9560218
• 负责人: Ronald Kubacki
• 金额: $ 7.49万
• 依托单位: IONIC SYSTEMS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-03-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9560218&HistoricalAwards=false
• 关键词: SBIR; Phase; Plasma; Deposited; Environmentally

This Small Business Innovation Reserch (SBIR) Phase I project will investigate a new class of plasma deposited organosilicon resists. These will be highly photosensitive organosilicon hydride network materials, which may be photo-oxidatively patterned and processed without removal from a vacuum processing environment Image development is accomplished by chlorine based reactive ion etch (RIE), leaving a robust, negative tone SiO2-like etch mask that allows pattern transfer into underlying materials in a single RIE sequence. This approach will allow significant reduction in facilities and materials costs, and the proposed plasma deposited photosensitive films will be applicable to all phases of current semiconductor manufacturing and other microelectronic devices as well. Commercial applications are also expected in the flat panel display industry, multi-chip modules, and photomask manufacture.

这个小型企业创新研究(SBIR)第一阶段项目将研究一种新型的等离子沉积有机硅抗蚀剂。这些将是高度光敏的有机硅氢化物网络材料，无需从真空处理环境中移除即可进行光氧化图案化和加工。图像显影通过基于氯的反应离子刻蚀(RIE)完成，留下坚固的、负色调的类似SiO_2的蚀刻掩模，允许在单个RIE序列中将图案转移到底层材料中。这种方法将大大降低设备和材料成本，所提出的等离子体沉积光敏薄膜将适用于当前半导体制造的所有阶段和其他微电子设备。在平板显示器行业、多芯片模块和光掩模制造领域也有望实现商业应用。