CAREER: Strain Effects in Semiconductor Nanostructures

9702725扎斯拉夫斯基的技术生涯摘要拟议的研究重点是应变对半导体纳米结构电子性质的影响。应变诱导效应在一维线和零维点中的研究相对较少，因为应变是非常不均匀的，并且缺乏被广泛研究的二维异质结构的面内对称性。我们将研究两类不同的结构：硅锗(SiGe)线和点，以及通过再生长制造的应变III-V线和环。SiGe的研究将建立在我们最近对亚微米SiGe量子点的应变松弛和应变诱导量子化的测量的基础上。III-V结构将通过直接连接到MBE系统的腔室中以应变异质结构刻蚀的原位图案化表面的调制掺杂再生长来制造。这项研究不仅与应变纳米结构物理学有关，而且还与一些拟议的结合应变区的纳米器件有关。除了研究生培训，这项研究将为对实验室经验感兴趣的学生提供充足的学期和为期一年的项目。非技术职业摘要：随着技术的进步，支撑现代计算机和激光的半导体器件变得越来越小。这些超微小的结构在制造过程中会受到机械应变的复杂影响。我们将通过实验研究两种类型的半导体中的应变效应：用于大多数电子电路的硅和对于需要非常高速操作或光学信号的应用至关重要的砷化镓。在揭示超小型结构中的应变和测量新器件的前景方面，这项研究将与布朗大学半导体物理和技术的研究生和本科生的教育相结合。该教育计划包括更新半导体器件课程，并对一个为期一学期的晶体管制造实验室进行改造，完成后，学生将有背景参加拟议研究的子部分的学期和为期一年的监督项目。***

9702725 Zaslavsky Technical CAREER Abstract The focus of the proposed research is the effect of strain on electronic properties of semiconductor nanostructures. Strain-induced effects in 1D wires and 0D dots are relatively unexplored, because the strain is strongly inhomogeneous and lacks the in-plane symmetry of the much studied 2D heterostructures. We will study two distinct classes of structures: silicon-germanium (SiGe) wires and dots, and strained III-V wires and rings fabricated by regrowth. The SiGe research will build on our recent measurements of strain relaxation and strain-induced quantization in submicron SiGe Quantum dots. The III-V structures will be fabricated by modulation-doping regrowth of in-situ patterned surfaces etched in strained heterostructures in a chamber attached directly to an MBE system. This research is relevant not only to strained nanostructure physics, but also to a number of proposed nanodevices that incorporate strained regions. In addition to graduate student training, this research will provide an ample number of semester and year-long projects for students interested in laboratory experience. %%% Nontechnical CAREER Abstract: As technology advances, semiconductor devices that underpin modern computers and lasers are becoming ever smaller. These ultrasmall structures are affected in complex ways by the mechanical strains that arise during their manufacture. We will experimentally investigate strain effects in two types of semiconductors: silicon, which is used for most electronic circuits, and gallium arsenide, which is crucial for applications that require very high speed operation or optical signals. In shedding light on strain in ultrasmall structures and gauging the promise of novel devices, this research will couple to the education of graduate and undergraduate students in semiconductor physics and technology at Brown. The education plan includes an update of semiconductor device courses and the revamping of a semester-long transistor fabrication laboratory, upon completing which students will have the background to take on semester and year-long supervised projects on sub- sections of the proposed research. ***