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Acquisition of Instrumentation for Deep Reactive Ion Etching of Ultra-Thin Bonded Wafers

Acquisition of Instrumentation for Deep Reactive Ion Etching of Ultra-Thin Bonded Wafers
购置超薄键合晶圆深度反应离子蚀刻仪器
批准号:
9871272
负责人:
Kenneth Farmer
金额:
$46.74万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-09-01 至 2002-08-31

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中文摘要
翻译
最近,新泽西理工学院的研究人员开创了未来微机电系统(MEMS)研究和开发的关键技术,其中超薄单晶硅膜(直径可达4英寸,薄至2微米)可以粘合到各种衬底上。这项技术将开辟一种新的设备类型,它需要单晶硅,而不是通过非键合方法沉积的多晶层。然而,将该技术扩展到实际的MEMS应用需要快速,深度蚀刻局部区域,通过粘合晶圆到底层,以创建独立的结构。为了满足这一需求,深度反应离子蚀刻(DRIE)系统将由主要研究仪器项目提供资金。DRIE是一种最先进的工艺,具有极高的硅去除率,对掩蔽材料的高选择性和精确的蚀刻轮廓控制。DRIE系统将补充NJIT独特的晶圆键合能力,并实现跨多个学科的广泛研究活动。该设施的目标是1)提供最先进的工艺方法和设备,以执行复杂的设计、建模、仿真、工艺表征和原型开发;2)在工业界和新泽西理工大学的学生、教师和员工之间产生协同作用,从而产生联合研究机会和有效的技术转让。每年有40多名来自各个学科的研究生和本科生使用洁净室设施,作为该设施的核心工具,预计将对他们的研究、高级培训和与行业的联系产生重大影响。新泽西理工大学领导着该州的微机电系统(MEMS)研究和开发工作,通过与罗格斯大学、史蒂文斯理工学院和许多工业合作伙伴(包括朗讯科技、Kearfott制导系统等)合作,新泽西理工大学支持新泽西微机电系统中心。利用主要研究仪器基金获得的深度反应离子蚀刻系统与超薄晶圆键合能力的结合将推动NJIT走在MEMS研究和开发的前沿。DRIE仪器将成为新泽西理工大学MEMS工作的基石,并通过我们的工业合作伙伴的扩展,将导致这项新兴技术在新泽西州及其他地区的进一步发展。它将使微电子器件与广泛的MEMS研究集成在一起,包括传感器和执行器,微流体,生物力学和光学,在工程和艺术和科学的至少六个本科和研究生学位领域提供统一的研究工作,包括物理,电气工程,材料科学,机械工程,生物医学工程和制造。***
英文摘要
9871272FarmerRecently, researchers at the New Jersey Institute of Technology pioneered a key technology for future micro-electrical-mechanical systems (MEMS) research and development, in which ultra-thin single crystal silicon membranes (up to 4" in diameter and as thin as 2 micrometers) may be bonded to a variety of substrates. This technology will open up a new class of device possibilities that require single-crystal silicon rather than the polycrystalline layers deposited by non-bonding methods. However, extension of this technology to practical MEMS applications requires rapid, deep etching of localized areas through the bonded wafers to the underlying layers to create free standing structures. In order to fill this need, a Deep Reactive Ion Etching (DRIE) system will be acquired with funding from the Major Research Instrumentation program. DRIE is a state-of-the-art process that is capable of extremely high silicon removal rates, high selectivity to masking materials, and precise etch profile control. The DRIE system will complement the unique wafer bonding capabilities of NJIT and enable a wide array of research activities across several disciplines. The goals of this facility are 1) to provide access to advanced state-of-the-art process methods and equipment to perform complex design, modeling, simulation, process characterization and prototype development, and 2) to generate synergy between industry and NJIT students, faculty and staff, leading to joint research opportunities and efficient technology transfer. With over 40 graduate and undergraduate students across a range of disciplines using the cleanroom facility each year, the DRIE, as a centerpiece tool of the facility, is expected to have a significant impact on their research, advanced training and contacts with industry. NJIT heads the state's micro-electro-mechanical systems (MEMS) research and development effort through the state-supported New Jersey MEMS center in collaboration with Rutgers University, Stevens Institute of Technology, and a number of industrial partners, including Lucent Technologies, Kearfott Guidance Systems, and others. %%%The combination of the deep reactive ion etching system, acquired using Major Research Instrumentation funding, and the ultra-thin wafer bonding capability will push NJIT to the forefront of MEMS research and development. The DRIE instrumentation would form the cornerstone of NJIT's MEMS effort, and, by extension through our industrial partners, would lead to the further development of this emerging technology in the state of New Jersey and beyond. It would enable the integration of microelectronic devices with a wide array of MEMS research, including sensors and actuators, microfluidics, biomechanics and optics, providing a unified research effort across at least six undergraduate and graduate degree areas in both engineering and arts and sciences, including physics, electrical engineering, materials science, mechanical engineering, biomedical engineering and manufacturing. ***
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Acquisition of Instrumentation for Research and Development of Bonded Ultra Thin Silicon Wafers
  • 批准号:
    9601937
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.26万
  • 财政年份:
    1996
  • 负责人:
    Kenneth Farmer
  • 依托单位:
CAREER: Ultra-Thin Oxides on Silicon and Thin Silicon Wafer Bonding
  • 批准号:
    9624798
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    1996
  • 负责人:
    Kenneth Farmer
  • 依托单位:
Ultra-Thin Silicon Wafer Bonding
  • 批准号:
    9529616
  • 项目类别:
    Standard Grant
  • 资助金额:
    $3.5万
  • 财政年份:
    1995
  • 负责人:
    Kenneth Farmer
  • 依托单位:
Tunneling Measurements for Electro-Structural Analysis of Ultra-thin Dielectrics on Silicon
  • 批准号:
    9313937
  • 项目类别:
    Continuing grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1993
  • 负责人:
    Kenneth Farmer
  • 依托单位:
海外基金