SBIR Phase I: In-Situ Spectral Ellipsometry Feedback Control Instrument for Metal Organic Chemical Vapor Deposition (MOCVD) of Complex Oxides

该小型企业创新研究（SBIR）第一阶段项目为开发和实施金属有机化学气相沉积（MOCVD）复合氧化物的原位反馈控制仪器奠定了基础。 如果成功，该项目将导致真实的时间原位反馈监测器解决的实际薄膜的质量正在沉积的复杂氧化物MOCVD工具的工艺开发和生产。该计划特别关注用于非易失性铁电随机存取存储器（弗拉姆）制造的锆钛酸铅（PZT），但由此产生的技术将适用于其他氧化物。 该项目将开发一种实时原位光谱椭圆偏振薄膜分析工具，可以反馈到过程控制中。具体而言，开发的技术将监测光学常数，厚度，成分和表面/界面形态。 第一阶段将侧重于开发非现场样本数据库（根据物理测量结果进行校准），并完善工具设计。 在第二阶段，一个薄膜分析装置将与现有的中试生产反应堆相匹配。 将安装该装置，完善数据库，并开发反馈控制软件和硬件。 第三阶段商业化将包括销售完整的氧化物MOCVD系统，该系统具有基于光谱椭圆偏振仪的原位工艺监测器，能够对沉积薄膜的质量控制进行真实的反馈。 这将使得能够以远高于现在可能的水平高产量经济地制造基于复杂材料的器件，例如非易失性存储器和红外探测器等。

This Small Business Innovation Research (SBIR) Phase I project lays the foundation for developing and implementing an in-situ feedback control instrument for Metal Organic Chemical Vapor Deposition (MOCVD) of complex oxides. If successful, the project will result in real time in-situ feedback monitors addressing the quality of the actual film being deposited by a complex oxide MOCVD tool for process development and for production. The program is specifically focused on lead zirconium titanate (PZT) for non-volatile ferroelectric random access memory (FRAM) fabrication, but the resulting technology will be applicable to other oxides. This project will develop a real-time in-situ Spectral Ellipsometry film analysis tool that can feedback into process control. Specifically, the developed technology will monitor the optical constants, thickness, composition and surface/interface morphology. Phase I will focus on development of ex-situ sample-data libraries (calibrated to physical measurements) and refine the tool design. In Phase II, a film analysis unit will be mated to an existing pilot production reactor. The unit will be implemented, data libraries refined, and feedback control software and hardware developed. Phase III commercialization will consist of marketing complete oxide MOCVD systems with Spectral Ellipsometer based in-situ process monitors that enable real time feedback for quality control of deposited films. This will enable high yield economical manufacture of complex material based devices such as non-volatile memories and infrared detectors, among others, at levels far above those now possible.