NIRT: Dynamics of Structure and Charge at the Molecular Scale

这个纳米级跨学科研究小组（NIRT）将专注于原子结构和电荷的离散性对纳米器件电子特性的影响。 将开发新的工具来检查纳米器件的结构和结构波动，同时测量电子输运特性。 具体而言，纳米金属线将在超高真空扫描隧道显微镜/原子力显微镜相结合的原位制造。 这些电线的原子尺度的结构波动将在电迁移过程中进行研究，同时获得电子传输信息。 小间隙结也将被制造，并用于同时研究碳纳米管和新型分子器件的原子结构和电子输运性质。 同时，纳米器件的波动静电环境的敏感性也将进行研究。 新型的电荷传感器，如碳纳米管为基础的单电子晶体管和半导体碳纳米管场效应晶体管将被研究。 将探索通过化学修饰来操纵这些器件的电荷灵敏度的努力。 本科生和研究生将参与尖端研究工具的开发和使用，并将在纳米技术前沿的跨学科研究方面接受出色的培训。这个纳米级跨学科研究小组（NIRT）正在解决两个基本的和相互交织的问题，随着电子器件尺寸变得越来越小，这两个问题的重要性将会增加。 首先，原子物质的离散性在确定器件的结构稳定性方面变得重要。 在器件运行过程中，分子之间的键等基本性质是否保持稳定。 其次，电荷的离散性导致器件对静电环境中的波动非常敏感。 局部电场或静电荷如何影响器件。 纳米尺度系统中电子输运的量子性质要求在原子水平上控制分子尺度器件的结构及其互连。 技术将被开发，同时图像的分子，纳米管，纳米导线和互连的原子结构，同时测量电子传输特性。 单电荷运动水平上的局部静电环境的变化将对通过纳米器件的电子输运产生显著影响。 拟议的研究将集中在纳米结构的电荷灵敏度，从超导单电子晶体管耦合到纳米线到半导体碳纳米管。 本科生和研究生将参与尖端研究工具的开发和使用，并将在纳米技术前沿的跨学科研究中接受出色的培训。

This Nanoscale Interdisciplinary Research Team (NIRT) will focus on the effects of the discreteness of atomic structure and charge on the electronic properties of nanoscale devices. New tools will be developed to examine the structure and structure fluctuations of nanoscale devices while simultaneously measuring electronic transport properties. Specifically, nanoscale metal wires will be fabricated in situ in an ultra-high vacuum combined scanning-tunneling microscope/atomic-force microscope. The atomic-scale structural fluctuations of these wires will be studied during electromigration while simultaneously acquiring electronic transport information. Small gap junctions will be also be fabricated, and used to study simultaneously the atomic structure and electronic transport properties of carbon nanotubes and novel molecular devices. Concurrently, the sensitivity of nanoscale devices to fluctuating electrostatic environments will also be studied. New charge sensors such as carbon nanotube-based single-electron-transistors and semiconducting carbon nanotube field-effect transistors will be investigated. Efforts to manipulate the charge sensitivity of these devices through chemical modification will be explored. Undergraduate and graduate students will be involved in the development and use of cutting-edge research tools and will receive excellent training in interdisciplinary research at the frontiers of nanotechnology.%%%This Nanoscale Interdisciplinary Research Team (NIRT) is attacking two fundamental and intertwined problems, which will increase in importance, as electronic device dimensions become smaller. First, the discreteness of atomic matter becomes significant in determining structural stability of devices. Will fundamental properties such as the bonds between molecules remain stable during device operation. Second, the discreteness of charge causes significant sensitivity of the device to fluctuations in the electrostatic environment. How will local electric fields or static charge affect the devices. The quantum nature of electronic transport in nanoscale systems requires that the structure of molecular-scale devices - as well as their interconnects - be controlled at the atomic level. Techniques will be developed to simultaneously image the atomic structure of molecules, nanotubes, nanoscale wires, and interconnects while measuring electronic transport properties. Changes in the local electrostatic environment at the level of motion of single charges will have pronounced effects on the electronic transport through nanodevices. The proposed research will focus on the charge sensitivity of nanostructures ranging from superconducting single-electron transistors coupled to nanowires to semiconducting carbon nanotubes. Undergraduate and graduate students will be involved in the development and use of cutting-edge research tools and will receive excellent training in interdisciplinary research at the frontiers of nanotechnology.