U.S.- Sweden Cooperative Research: Photoelectron Microscopy Studies of Wide Band Gap Nitride Semiconductors

该奖项支持Kevin Smith和来自波士顿大学的学生与瑞典隆德大学MAX-lab同步辐射设施的Ralf Nyholm的合作。该项目将侧重于利用光电子显微镜研究宽频带隙氮化半导体的结构特性，Nyholm教授是该领域的专家。新的合作将结合两个实验室的技能，以解决氮化半导体的基本重要性问题，并期望通过结合美国和瑞典小组的独立但互补的专业知识来实现高水平的生产力。具体目标包括了解清洁二元氮化物半导体的微观表面电子特性，了解简单气体分子在特征良好的氮化物表面上的吸附，了解金属接触层的生长、结构和稳定性，了解复杂氮化物合金表面的热分解，以及培训学生。

0104605SmithThis award supports Kevin Smith and students from Boston University in a collaboration with Ralf Nyholm at the MAX-lab synchrotron radiation facility in the University of Lund, Sweden. The project will focus on the study of structural properties of wide band gap nitride semiconductors using photoelectron microscopy, in which area Professor Nyholm is an expert. The new collaborations will combine the skills of the two labs to address issues of fundamental importance in nitride semiconductors, and a high level of productivity is expected from combining the separate but complementary expertise of the U.S. and Swedish groups. Among the specific goals of the proposed work are an understanding of microscopic surface electronic properties of clean binary nitride semiconductors, understanding adsorption of simple gas molecules on well-characterized nitride surfaces, understanding growth, structure, and stability of metal contact overlayers, understanding the thermal decomposition of complex nitride alloy surfaces, and training of students.