SBIR Phase I: Nanoporous Silica Slurry Technology for Enhanced Chemical Mechanical Planarization (CMP) of Low "K" Dielectrics

小企业创新研究（SBIR）第一阶段项目将合成用于低介电常数（K）材料的化学机械平面化（CMP）的新型浆料。二氧化硅和氧化铝等标准磨料会导致柔软的低K表面出现严重的划痕、凹痕和分层。在该项目中，建议使用纳米多孔二氧化硅基浆料，其中颗粒的硬度可以控制。在该项目中，将首先进行纳米多孔二氧化硅颗粒的合成，然后进行表征;接下来将开发浆料配方，然后进行表征，最后根据CMP应用的特定需求进行测试。商业上，这些浆料有望减少表面缺陷并提高浆料稳定性。预计主要的电子制造公司将使用这种新型浆料。与主要工业合作伙伴合作，已经计划在图案化晶片上进行晶片级实验。

The Small Business Innovation Research (SBIR) Phase I project will synthesize novel slurries for chemical mechanical planarization (CMP) of low dielectric constant (K) materials. Standard abrasives such as silica and alumina lead to significant scratching, indenting and delamination of the soft low K surface. In this project it is proposed to use nanoporous silica based slurries in which the hardness of the particle can be controlled. In the project, synthesis of nanoporous silica particles will first be carried out followed by charcterization; next will be development of the slurry formulation followed by charcterization and finally testing against the specific needs of the CMP application.Commercially, these slurries are expected to reduce surface defects and enhance slurry stability. It is expected that major electronic manufacturing companies will use this new type of slurry. Wafer level experiments are already planned on patterned wafers in collaboration with key industrial partners.