Molecular Beam Study of the Surface Reaction Chemistry of Metastable Molecular Nitrogen

Doak/Arizona State这一研究项目是在亚利桑那州立大学物理系布鲁斯·多克教授的实验室进行的，研究了氮化物半导体薄膜生长过程中亚稳态分子氮的反应性。 在分析和表面化学计划的支持下，正在进行激发的分子氮物种形成氮化物和氧氮化物薄膜的反应的基础研究。 原位和非原位的方法相结合，用于表征使用这些研究开发的新型超音速亚稳氮束源制备的薄膜。 从这项工作中获得的基本信息是相关的电子材料制备的处理协议的发展。在分析和表面化学项目的支持下，亚利桑那州立大学的Doak教授和他的小组正在研究亚稳态分子氮与半导体表面相互作用的基本反应动力学。 本研究的重点在于了解氮化物与氮氧化物半导体与绝缘体薄膜的成长机制。 这些研究的信息与重要的半导体和电子器件加工方法的设计有关。

AbstractCHE-0234766Doak/Arizona StateThis research project, in the laboratory of Professor Bruce Doak in the Department of Physics at Arizona State University, examines the reactivity of metastable molecular nitrogen in the growth of nitride semiconductor thin films. With the support of the Analytical and Surface Chemistry Program, fundamental studies of the reaction of excited molecular nitrogen species to form nitride and oxynitride thin films are being carried out. A combination of in situ and ex situ methods are used to characterize the films prepared using the novel supersonic metastable nitrogen beam source developed for these studies. The fundamental information obtained from this work is relevant to the development of processing protocols for electronic materials preparation. With the support of the Analytical and Surface Chemistry Program, Professor Doak and his group at Arizona State University are examining the fundamental reaction dynamics of metastable molecular nitrogen interacting with semiconductor surfaces. The focus of this work is on understanding the mechanisms of growth of nitride and oxynitride semiconductor and insulator thin films. Information from these studies is relevant to the design of important semiconductor and electronic device processing methods.