Study of Ill-V Nitride Semiconductor Resonant Cavity Enhanced Photodetector by Molecular Beam Epitaxy

共振空穴增强型光电探测器（RCE-PD）是预期具有波长选择性、高量子效率和高速特征学的。基于AlGaN的RCE-PD是theoretically investigate.Investigation of high-quality GaN growth on （0001）Al-y D22-y D2O-y D23-y D2 substrates by molecular beam epitaxy using elementGa and re-plasma nitrogen as source was carried out。2.6微米/小时的极高速度GaN增长率也是由基础设施中的基础硝酸盐供应量来证明的。在其中的硝酸盐中，一种新型的切割机控制技术在连续的Ga供应中被应用于锰掺杂的GaN增长。As grown p-type GaN with low resistManagement（p= 2 x10-D117-D1-3-D1，弧度=3.8-cm） was obtained。crystal polarity control technique was also demonstrated。高温生长的AlN缓冲层与Ga-Polarity GaN生长和高温生长的AlN中间层（HT-AlN-ILs）有关，带有差异 ... More 在水晶质量的改进中发现了不同的角色来扮演不同的角色。8纳米厚的HT-AlN-IL发布了关于电子属性的改进。在另一边，2nm厚HT-AlN-IL改进了表面形态学。这些8 nm-厚和2nm-厚HT-AlN-ILS改进了两者的电子属性和表面形态学， concurrently.Nitrogen polarity-GaN可以生长在Al-D12-D1 O-D13-D1 substrates with enough initial nitridation by RF-plasma nitrogen。GaN层随着迁移增强的表皮生长（MEE）。MEE-GaN的分散密度被HT-AlN-IL的插入量显著减少，而且它清楚地观察到，在HT-AlN-IL的传递期间，大多数分散量都是弯曲的。HT-AlN-IL上MEE-GaN生长的分散密度估计约为2.1 x10-D19-D1cm-D1-2-D1通过选择性光电化学湿蚀刻，作为一个结果，668-cm-D12-D1/Vs实现了最高RT移动性。AlGaN分布的Bragg反射器用于在蓝色和UV区域生长由分子光束epitusing RF-plasma excited nitrogen。95%和92%的相对高反射率在444纳米和377纳米的波长上达到了，对此，尊重。Less（低）

The resonant cavity enhanced photodetector (RCE-PD) is expected to have wavelength selectivity, high quantum efficiency and high-speed characteristics. The photosensitivity characteristics of AlGaN based RCE-PD was theoretically investigate.Investigation of high-quality GaN growth on (0001) AlィイD22ィエD2OィイD23ィエD2 substrates by molecular beam epitaxy using elemental Ga and re-plasma nitrogen as source was carried out. Extreme high-speed GaN growth of 2.6um/hr was also demonstrated by increase of radical nitrogen supply at the substrates. Novel shutter control technique in which nitrogen was alternately supplied during continuous Ga supply was applied for Mg doped GaN growth. As grown p-type GaN with low resistivity (p=2x10ィイD117ィエD1cmィイD1-3ィエD1, ρ=3.8Ωcm) was obtained.The crystal polarity control technique was also demonstrated. The high-temperature grown AlN buffer layer brought about a Ga-polarity GaN growth and the high-temperature grown AlN intermediate layers (HT-AlN-ILs) with diffe … More rent thickness were found to play different roles in improvement of crystal quality. The 8nm-thick HT-AlN-IL brought about improvement of electrical properties. On the other hand, the 2nm-thick HT-AlN-IL improved surface morphology. The combination of these 8nm-thick and 2nm-thick HT-AlN-ILS improved both electrical property and surface morphology, concurrently.Nitrogen polarity-GaN could be grown on the AlィイD12ィエD1OィイD13ィエD1 substrates with enough initial nitridation by RF-plasma nitrogen. The GaN layers were grown with migration enhanced epitaxy (MEE). The dislocation density of MEE-GaN remarkably reduced by insertion of the HT-AlN-ILs and it was clearly observed that most dislocations were bent during passing through the HT-AlN-IL. The dislocation density of MEE-GaN grown on HT-AlN-IL was evaluated to be about 2.1x10ィイD19ィエD1cmィイD1-2ィエD1 by a selective photoelectrochemical wet etching, as a result, the highest RT mobility of 668cmィイD12ィエD1/Vs was achieved.The AlGaN distributed Bragg reflectors for at blue and UV region were grown by molecular beam epitaxy using RF-plasma excited nitrogen. Relatively high reflectivity of 95% and 92% was achieved at the wavelength of 444nm and 377nm, respectively. Less