Properties of the Pseudo-Binary Wide Band Gap Semiconductor Silicon Carbide-Aluminum Nitride

所提议活动的总体目标是提供对PI最近报道的新型宽带隙半导体（SiC）1-x(AlN)x的性质的基本了解，并为学生提供半导体薄膜合成和表征的研究经验。该方法是利用GSMBE（气体源分子束外延）生长具有可变成分x的伪二元材料（SiC）1-x(AlN)x，探索在2.9至4.5 eV范围内进行带隙工程的可行性。该项目包括使用原位显微技术研究这些薄膜的生长模式。本文还提出了从微观结构、电子结构、缺陷密度和掺杂剂种类等方面研究（SiC）1-x(AlN)x薄膜的基本性质。该项目涉及与具有技术相关性的电子材料相关的基础研究问题。该项目的一个重要特点是非常重视教育，并将研究与教育相结合。提议的活动将包括少数族裔本科生参与基础半导体材料研究。希望在研究和发现过程中产生的兴奋将成功地鼓励被忽视的少数民族学生在毕业时攻读科学和工程硕士或博士课程

The general aim of the proposed activities is to provide a basic understanding of the properties of the new wide band gap semiconductor, (SiC)1-x(AlN)x, reported recently by the PI, and to provide re-search experience in the synthesis and characterization of semiconductor films for students. The ap-proach is to utilize GSMBE (gas source molecular beam epitaxy) growth of the pseudo-binary ma-terials, (SiC)1-x(AlN)x , with variable composition x to explore the feasibility of band gap engineering in the range of 2.9 to 4.5 eV. The project includes the study of the growth mode of these films using in situ microscopic techniques. It is also proposed to investigate the fundamental properties of the (SiC)1-x(AlN)x films in terms of microstructure, electronic structure, defect density, and dopant spe-cies. %%% The project addresses fundamental research issues associated with electronic materials having technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. The proposed activities will include the involvement of under-represented minority undergraduate students in basic semiconductor materials research. It is hoped that the excitement generated in the research and discovery process will succeed in encour-aging under-represented minority students upon graduation to pursue master or doctoral programs in science and engineering.***