Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation
Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation
批准号:
DP0987233
负责人:
Prof Mark Ridgway
金额:
$30.16万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2009
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2009-01-01 至 2012-12-31
中文摘要
这项建议与研究重点3:建设和改造澳大利亚工业的前沿技术以及优先目标:突破性科学、前沿技术和先进材料是一致的。我们试图推断和理解在非晶态半导体的快速重离子辐照过程中操作的过程,以探索基本的材料性质。我们的成果和相应的科学见解将扩大非晶态半导体在先进技术中的适用性,提升国家研究形象,增加国内知识库,并培养出训练有素的年轻科学家来使用澳大利亚同步加速器。
英文摘要
This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.
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