Atomic-Scale Identification of Amorphization and Relaxation Processes in Compound Semiconductors

化合物半导体中非晶化和弛豫过程的原子尺度识别

• 批准号: DP0343345
• 负责人: Prof Mark Ridgway
• 金额: $ 19.87万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2003
• 资助国家: 澳大利亚
• 起止时间: 2003-01-01 至 2005-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0343345
• 关键词: Atomic; Scale; Identification; Amorphization; Relaxation

We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.

我们寻求在纳米尺度上，在用于光子器件制造的化合物半导体中，对控制植入诱导结构的过程的基本理解。由于植入引起的紊乱限制了此类装置的性能，因此本项目具有重大的技术意义和国家效益。光子科学技术的摄动角相关和扩展x射线吸收精细结构光谱学将用于确定非晶化和弛豫机制，以便在先进的电信系统中更有效地开发化合物半导体。