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U.S.-Egypt Cooperative Research: Radio Frequency Microelectromechanical Systems (MEMS) Integration

U.S.-Egypt Cooperative Research: Radio Frequency Microelectromechanical Systems (MEMS) Integration
美埃合作研究:射频微机电系统(MEMS)集成
批准号:
0512976
负责人:
Mona Zaghloul
金额:
$0.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-09-01 至 2008-08-31

项目摘要

项目成果

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中文摘要
翻译
描述:该项目支持华盛顿乔治华盛顿大学电气和计算机工程系的莫娜·扎格卢尔博士和埃及开罗电子研究所的阿迈勒·穆罕默德博士之间的合作研究。他们计划研究利用微电子机械系统(MEMS)技术设计和制造用于无线应用的RF-SAW传感器。智能优势:该项目专注于设计和制造用于小型化RF无线应用的微电子机械(MEMS)元件。主要目标将是实现新一类低功耗、低成本和高性能的微型RF MEMS器件,通过取代当前收发电路中使用的片外无源元件来显著节省空间和时间。这项工作将集中在适合于移动和无线通信系统应用的集成的CMOS衬底上实现RF-MEMS组件。除了它们在集成和小型化方面的潜力外,一个目标是设计与CMOS电路集成的低功耗和高Q器件,并开发特定类型的器件,这些器件将集成在与接收器/收发器相同的衬底上。第一个任务是回顾由MEMS技术生产的高Q值、低功耗器件的现状和前景,以确定它们在无线通信中的应用。器件的例子包括可变电容器、高Q电感和最近在CMOS衬底上开发的表面声波器件(谐振器和滤波器)。考虑到改进的工艺和允许集成的新材料,将讨论这些器件与单片衬底上的控制电路的集成。下一阶段是制造阶段,使用可抗击的CMOS技术在同一芯片上生产MEMS元件的完整单片射频电路。最后,将对所制作的MEMS器件进行表征和测试,以确保其在射频应用中的健壮性和功能性。更广泛的影响:合作的重点是微系统技术的发展,这涉及到微传感器和执行器的设计、建模和制造,以配合不同的应用。拟议系统的设计和模拟将由埃及团队进行,而美国团队将领导在制造设施中制造设计的MEMS组件,并对原型芯片进行评估和测试。双方的初级科学家和研究生将参与该项目。这一合作将帮助美国和埃及在我们的研究所建立微机械加工的新技术。该项目得到了美国-埃及联合基金计划的支持,该计划为两国的科学家和工程师提供资助,以开展这些合作活动。
英文摘要
0512976ZaghloulDescription: This project supports a collaborative research between Dr. Mona Zaghloul, Department of Electrical and Computer Engineering, George Washington University, Washington, DC and Dr. Amal Mohamed, Electronic Research Institute, Cairo, Egypt. They plan to do research on the design and fabrication of RF-SAW sensors using microelectromechanical systems (MEMS) technology for wireless applications.Intellectual Merits: This project focuses on designing and fabrication of microelectromechanical (MEMS) components for miniaturized RF wireless applications. The main target will be enabling a new class of low-power, low -cost, and high - performance of miniature RF MEMS devices, which offer significant space and time saving by replacing the off-chip passive components used in the current transceiver circuits. This work will focus on the realization of RF-MEMS components on CMOS substrate that are suitable for integration for mobile and wireless communication system applications. In addition for their potential for integration and miniaturization, a goal will be to design low power and high Q devices integrated with CMOS circuits, and to develop specific types of devices that will be integrated on the same substrate as Receiver/Transceiver. The first task is to review the status and prospects for high- Q, low power devices produced by the MEMS technology to identify their applications in wireless communication. Examples of devices are Variable Capacitors, High Q Inductors, and Surface Acoustic Wave devices (Resonators and Filters) that are recently being developed on CMOS substrate. The integration of those devices with the control circuits on a monolithic substrate will be addressed in view of modified process and new materials to allow for integration. The next stage is the fabrication stage to produce a complete monolithic RF circuit with MEMS components on the same chip using combatable CMOS technology. Finally, the characterization and testing of the produced MEMS devices to assure the robustness and functionality on RF application will be done. Broader Impacts: The collaboration is to focus on the development of the microsystem technology, which involves design, modeling, and fabrication of micro-sensor and actuator in concert with different applications. The design and the simulation of the proposed system will be carried out by the Egyptian team, while the U.S. team will lead the effort in fabricating the designed MEMS components in the fabrication facility, and in the evaluation and testing of the prototype chip. Junior scientists and graduate students on both sides will participate in the project. This collaboration will help both of U.S and Egypt in establishing the new technology of micromachining in our institutes. This project is being supported under the US-Egypt Joint Fund Program, which provides grants to scientists and engineers in both countries to carry out these cooperative activities.
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EAGER: Enhancement of Piezoelectric Properties in two-dimensional materials and its application
  • 批准号:
    2033044
  • 项目类别:
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  • 资助金额:
    $15.0万
  • 财政年份:
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  • 项目类别:
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  • 财政年份:
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  • 批准号:
    9001658
  • 项目类别:
    Standard Grant
  • 资助金额:
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    1990
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VLSI Implementation of Neural - Type Cells
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    Standard Grant
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    1988
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  • 依托单位:
海外基金