The Chemistry of Inorganic Nanoelectronic Interfaces

在分析和表面化学计划的支持下，加芬克尔教授和他在罗格斯大学化学系的合作者正在研究对纳米电子器件具有重要意义的无机界面化学。半导体材料与高介电常数绝缘体之间的界面以及金属与高介电常数绝缘体之间的界面是本课题研究的重点。光电子能谱、反向光电子能谱、扫描探针显微镜和离子散射法都被用来表征半导体或金属与HfO2、Al_2O_3或Gd_2O_3等高介电性氧化物之间的界面。从这项工作中获得的基本理解可以推动更小的硅基电子设备的发展。了解超小型电子器件中的界面化学对于设计和生产越来越小的电子芯片是至关重要的。加芬克尔教授和他在罗格斯大学的同事们正在使用现代表面科学方法来获得对这种涉及高介电常数材料的界面化学的基本了解。这项工作的结果将对半导体行业的下一代设计产生重大影响。

AbstractCHE-0518345Garfunkel/RutgersWith the support of the Analytical and Surface Chemistry Program, Professor Garfunkel and his collaborators in the Department of Chemistry at Rutgers University are examining inorganic interfacial chemistry of importance to nanoelectronic devices. The interface between semiconductor materials and high dielectric constant insulators, and the interface between metals and these high dielectric insulators is the focus of this research project. Photoemission, inverse photoemission, scanning probe microscopy and ion scattering methods are all used to characterize the interface between semiconductors or metals and high dielectric oxides such as HfO2, Al2O3, or Gd2O3. Fundamental understanding gained from this work allows the push to even smaller silicon based electronic devices. An understanding of the interfacial chemistry in ultra small scale electronic devices is crucial to the design and production of smaller and smaller electronic chips. Professor Garfunkel and his colleagues at Rutgers are using modern surface science methods to obtain a fundamental understanding of this interfacial chemistry involving high dielectric constant materials. The results of this work will strongly impact the semiconductor industry's next generation designs.