A metal route to graphene synthesis for electronic devices

该项目旨在以金属为基础合成高有序石墨烯。该方法在氧化钇稳定氧化锆（YSZ）缓冲硅（111）晶圆上的单晶金属膜上进行乙烯气相沉积。作为分析技术，我们采用扫描隧道显微镜（STM），俄歇电子能谱（AES）和低能电子衍射（LEED）。此外，我们将使用中心设施的低能电子显微镜（LEEM）和光发射电子显微镜（PEEM）的优先计划。我们已经证明，负载Ir（111）和Ru（0001）薄膜的极高结晶度和清洁度可以用于生长有序的单层石墨烯片。在初步实验中发现，Ni（111）薄膜可以在温和的气基过程中与CO蚀刻，即所谓的Mond过程。在项目的第二阶段，我们将利用在第一阶段LEEM实验中发现的奥斯特瓦尔德成熟过程，开发提高Ni(111)/YSZ/Si（111）载体上石墨烯片晶体质量的方法。我们将进一步改进Mond工艺的参数，并对石墨烯样品的电子特性进行必要的测量。Ni(111)/YSZ/Si（111）载体的有利性质将被用于在离轴样品和用1D模板预结构的样品上生长石墨烯纳米带。

The project aims at a metal-based synthesis of highly ordered graphene. The method uses CVD of ethylene on single-crystal metal films supported on yttria-stabilized zirconia (YSZ)-buffered Si(111) wafers. As analytical techniques we employ scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). In addition, we will use the central facility for low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) of the priority program. We have already shown that the extremely high crystallinity and cleanness of supported Ir(111) and Ru(0001) films can be utilized for growing ordered, single layer graphene sheets. In preliminary experiments it was found that Ni(111) films could be etched in a mild, gas-based process with CO, the so-called Mond process. In the second period of the project we will develop methods for improving the crystalline quality of the graphene sheets on Ni(111)/YSZ/Si(111) supports by utilizing Ostwald ripening processes discovered in LEEM experiments in the first period. We will furthermore improve the parameters for the Mond process, and we will perform the required measurements of the electronic properties of the graphene samples. The favorable properties of the Ni(111)/YSZ/Si(111) support will be then utilized for growing graphene nanoribbons on off-axis samples and on samples prestructured with 1D templates.