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ANN NIRT: GOALI : Nano-Engineering Efficient Optoelectronic Devices

ANN NIRT: GOALI : Nano-Engineering Efficient Optoelectronic Devices
ANN NIRT:GOALI:纳米工程高效光电器件
批准号:
0609416
负责人:
Sergey Nikishin
金额:
$100.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-06-15 至 2012-05-31

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中文摘要
翻译
智能优势:这个NIRT项目专注于纳米级光子结构的开发,以克服限制光电子器件效率的关键障碍。新的概念将被制定并应用于具有重要技术意义的AlGaN和InGaN半导体,从而实现高效的发光二极管(LED)和激光二极管(LD),它们工作在绿色和深紫外波长区。该项目包括新型光电纳米结构的生长,对其物理性质的研究,以及器件的设计、制造和测试。这些活动涉及科学和工程领域广泛的技术和教育问题。主要的建议是:(1)衬底工程和纳米模板;(2)有源区纳米工程;(3)增强光提取的纳米光子表面。具有垂直和横向尺寸控制的有序纳米结构将允许在量子水平上定制属性,从而产生新的器件概念。使用纳米工程光子晶体来改变和控制发射性能有望提高LED的性能,并使LD的演示成为可能。单独而言,这三个领域将提高内部和外部效率。集成后,它们将加强光发射器的设计和制造。该提案将与技术和设备国际组织(TDI)合作实施。更广泛的影响:所描述的设备有许多潜在的应用。在商业上,这些光源非常适合用于投影显示和照明。小型化的波长调谐光源是便携式生物危害检测的关键。研究计划将与教育发展相结合。学生将接受以我国技术需求为中心的高级跨学科研究的培训。作为我们目标协议的一部分,他们将与TDI的科学家和工程师密切合作,极大地丰富他们的教育经验。课堂和实验室课程的新组成部分将包括活性纳米结构和纳米系统的制造,吸引来自不同学科的学生。最后,积极招收学生,重点是代表性不足的群体,将满足国家对科学和工程方面的劳动力需求。
英文摘要
Intellectual Merit: This NIRT project focuses on the development of nanometer-scale photonic structures to overcome critical obstacles limiting efficiency of optoelectronic devices. Novel concepts will be formulated and applied to the technologically important AlGaN and InGaN semiconductors leading to efficient light emitting diodes (LEDs) and laser diodes (LDs) operating in the green and deep ultraviolet wavelength regions. The project encompasses growth of novel optoelectronic nanostructures, studies of their physical properties, and device design, fabrication, and testing. These activities span a broad range of technical and educational issues in science and engineering. The major proposal thrusts are: (1) substrate engineering and nanotemplating; (2) active region nanoengineering; (3) and nanophotonic surfaces for enhanced light extraction. Ordered nanostructures grown with vertical and lateral size control will allow tailoring of properties at the quantum level, leading to new device concepts. The use of nano-engineered photonic crystals to modify and control emission properties promises to improve LED performance and enable demonstration of LDs. Individually these three areas will improve internal and external efficiencies. Integrated, they will enhance design and fabrication of light emitters. The proposal will be carried out in partnership with Technology and Device International (TDI). Broader Impacts: The devices described have numerous potential applications. Commercially, these sources are ideally suited for projection displays and lighting. Miniaturized wavelength-tuned sources are critical for portable biohazard detection. The research plan will be integrated with educational development. Students will be trained in advanced interdisciplinary research central to our nation's technical needs. As part of our GOALI agreement, they will collaborate closely with TDI scientists and engineers, greatly enriching their educational experience. New components of classroom and laboratory courses will incorporate fabrication of active nanostructures and nanosystems, drawing students from diverse disciplines. Finally, active recruitment of students, emphasizing under-represented groups, will address national workforce needs in science and engineering.
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会议论文
Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology
  • 批准号:
    1028791
  • 项目类别:
    Standard Grant
  • 资助金额:
    $21.0万
  • 财政年份:
    2010
  • 负责人:
    Sergey Nikishin
  • 依托单位:
MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education
  • 批准号:
    0923013
  • 项目类别:
    Standard Grant
  • 资助金额:
    $64.65万
  • 财政年份:
    2009
  • 负责人:
    Sergey Nikishin
  • 依托单位:
海外基金