SBIR Phase I: CVD Growth of Silicon Nanocables Using Patterned Silicon Dioxide Mask

这个小型企业创新研究第一阶段项目将评估一种使用CVD技术制造高密度p-n硅纳米阵列的新方法的可行性。该项目的目标是使用图案化掩模创建生长的p-硅纳米线阵列，这种掩模将实现高度有序和完美定向的纳米线，这是传统方法无法实现的。在这些纳米线上，CVD将被用于径向生长n-硅层，从而产生高质量的单晶结构。其目的是展示集成在可纳米阵列结构中的高质量半导体结。控制和表征由化学气相沉积获得的p-n硅纳米电缆的技术是这一提议的主要焦点。这是已知的唯一一种技术，可以控制纳米结构的取向，并将p-n结集成在纳米线本身中，通过精确的生长防止结构相互短路。当后续层非常薄时，控制和验证表面和界面质量的技术尤其重要，就像本太阳能电池设计中的情况一样。这些结果为创建高度灵活的纳米结构阵列模板和阵列奠定了基础。虽然这项研究针对的是太阳能电池，但在纳米电子学和纳米制造方面具有广泛的适用性。其结果将是复杂的纳米结构阵列，它们可以相互绝缘。通过控制纳米线的质量、组成和尺寸，可以在其上沉积超薄的层，从而可以低成本地创造出可针对关键纳米级性能进行调节的纳米结构材料。这使得散装材料无法实现的应用。这些工艺应该能够以低成本连续制造尺寸和密度的纳米结构，这是目前的商业膜不可能实现的。实现经济、可靠、高性能太阳能电池的关键是纳米结构器件，而不是块状材料。结果将是离散结构的阵列，但同样的技术也适用于电路、传感器和光学应用。

This Small Business Innovation Research Phase I project will assess the feasibility of a new fabrication method for high-density p-n silicon nanocable arrays using CVD techniques. This project aims to create grow p-silicon nanowire arrays using a patterned mask that will enable highly ordered and perfectly oriented nanowires, which cannot be achieved through conventional methods. On these nanowires, CVD will be used to grow n-silicon layers radially, resulting in high-quality single-crystal structures. The aim is to demonstrate high quality semiconductor junctions integrated in a nanocable array structure. Techniques to control and characterize the p-n Si nanocables obtained by CVD are the primary focus of this proposal. It is the only technology known that may allow controlled orientation of nanostructures and integration of the p-n junction in the nanowire itself, with precision growth that prevents structures from shorting against one another. Techniques to control and verify the quality of surfaces and interfaces are especially important when the subsequent layers are extremely thin, as is the case in this solar cell design. The results lay the foundation for creating highly-flexible nanostructure array templates and arrays. Although targeted at solar cells, this research has broad applicability in nanoelectronics and nanofabrication. The result will be arrays of complex nanostructures that can be insulated from one another. Controlling the quality, composition and dimensions of nanowires that allow ultra-thin layers deposited thereon allows creating nanostructured materials that are tunable for key nanoscale properties at low cost. This enables applications not possible with bulk materials. These processes should allow low-cost continuous fabrication of nanostructure of dimensions and density not possible using current commercial membranes. Nanostructured devices, rather than bulk materials, are the key to realizing economical, reliable, high performance solar cells. Results will be arrays of discrete structures but the same techniques are applicable to circuitry, sensors, and optical applications.