Materials World Network-- Ultrafast Switching of Phase Change Materials: Combined Nanosecond and Nanometer Exploration

这个材料世界网络专注于非易失性相变存储器(PCM)是未来数据存储系统的一种有前途的替代方案，因为它比现有技术更具可扩展性，并且需要更少的电力。在写入数据时了解和控制相变过程的材料科学尤为重要，因为它定义了最终的操作速度，是克服存储数据准确性和寿命挑战的根本。为了调查这些问题，康涅狄格大学和英国兰开斯特大学的这项联合努力利用了两个地点在纳米和纳秒尺度的属性测量方面的互补专业知识。除了为受资助的学生提供一学期的海外学习外，还将为当地高中教师开发该主题的教学模块，并将组织两次国际科学研讨会和一期专题期刊。现有的数据存储系统基于难以扩展、相对较慢和/或考虑到未来存储需求而能源效率低下的技术。非易失性相变存储器(PCM)基于局部可切换的晶态和非晶态的电阻变化，是一种很有前途的替代方案。因此，这种切换过程的材料科学非常重要，特别是形核和生长的动力学，它定义了最终的切换速度，并涉及到比特保持、保真度和疲劳的挑战。为了调查这些问题，美国和英国的这项联合工作利用了在必要的纳米和纳秒尺度上的定量电子、机械和热性质测量方面的互补专业知识。相应地，切换将通过电、热和光学启动，切换模式、速度和机制将通过扫描探针显微镜的几种变化来量化，作为组成、处理和切换周期的函数。该项目的特点是支持的学生在国外学习一学期，教师交换，循环测量，以及广泛的产业合作。在颁奖期间，皮？S将为当地高中教师开发动手教学模块，联合举办两次国际研讨会，并共同编辑一期关于纳米表征和下一代存储器件主题的特刊。

This Materials World Network focuses on Non-volatile Phase Change Memory (PCM) is a promising alternative for future data storage systems, as it is more scale-able and requires less power than present technologies. Understanding and controlling the materials science of the phase change process while writing data is of particular importance, as it defines the ultimate operational speed and is fundamental to surmounting challenges with stored data accuracy and longevity. To investigate these issues, this joint effort between the University of Connecticut and Lancaster University in the UK leverages complementary expertise at both sites in nanometer- and nanosecond- scale property measurements. In addition to a semester abroad for the supported students, teaching modules on the topic will be developed for local high school teachers, and two international scientific symposia as well as a special journal issue will be organized on the topic of this sponsored research.Present data storage systems are based on technologies that are difficult to scale, relatively slow, and/or energy inefficient given future storage requirements. Non-volatile Phase Change Memory (PCM), based on resistance changes for locally switchable crystalline vs. amorphous states, is a promising alternative. The materials science of this switching process is therefore of tremendous importance, especially the dynamics of nucleation and growth which defines ultimate switching speeds and is implicated in challenges with bit retention, fidelity, and fatigue. To investigate these issues, this joint US/UK effort leverages complementary expertise in quantitative electronic, mechanical, and thermal property measurements at the necessary nanometer and nanosecond scales. Accordingly, switching will be initiated electrically, thermally, and optically, and the switching pattern, speed, and mechanisms will be quantified by several variations of scanning probe microscopy as a function of composition, processing, and switching cycles.The program features a semester abroad for the supported students, faculty exchanges, round-robin measurements, and extensive industrial collaboration. During the award, the PI?s will develop hands-on teaching modules for local high school teachers, jointly organize two international symposia, and co-edit a special journal issue on the topics of nanocharacterization and next-generation memory devices.