CAREER: 3D Optoelectronic Devices Fabricated via 2-Color Photo-inhibition/initiation Lithography
CAREER: 3D Optoelectronic Devices Fabricated via 2-Color Photo-inhibition/initiation Lithography
批准号:
0954202
负责人:
Robert McLeod
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-02-01 至 2015-01-31
中文摘要
目的传统的光刻技术是通过光引发剂对图案光的单光子吸收来局部曝光抗蚀剂。在双色光抑制/引发(2PII)光刻中,这些暴露区域被光抑制剂中第二种颜色的单光子吸收产生的抑制剂周围图案所限制。本课题的具体研究目的是验证抑制剂扩散对2PII光刻分辨率限制的影响。这将通过将2PII化学结合到厚的固体抗蚀剂中来实现,这种抗蚀剂可以根据3D直写光刻技术自行开发索引结构。由此产生的固体、光模式材料是硅光子学封装和高性能数据存储领域3D光电器件的基础。当前的半导体光刻技术和光数据存储技术都处于分辨率的技术极限。尽管这些应用处于成本谱的两端,但面对衍射极限,这两个行业的未来都不确定。通过结合3D分辨率优于现有的非线性吸收方法和光抗蚀剂的高灵敏度,所提出的光刻方法具有在广泛的技术范围内改变光电微纳米制造的潜力。更广泛的影响该研究将通过开发本科光学序列整合到教育中,该序列具有通过软件控制光刻和自开发材料进行3D光电和纳米光子电路的高级设计,制造和测试。本课程将以设计为工程核心技能的教学方法为基础
英文摘要
ObjectiveTraditional photolithography begins with single-photon absorption of patterned light by a photo-initiator to locally expose a resist. In two-color photo-inhibition/initiation (2PII) lithography, these exposed regions are confined by a surrounding pattern of inhibitors generated by one-photon absorption of a second color in a photo-inhibitor. The specific research goal of this proposal is to test the conjecture that the resolution limit of 2PII lithography is enforced by inhibitor diffusion. This will be accomplished by incorporating the 2PII chemistry into thick, solid resists which self-develop index structures in response to 3D direct-write lithography. The resulting solid, photo-patternable materials are foundations for 3D optoelectronic devices in the areas of silicon photonics packaging and high-performance data storage.Intellectual MeritThe current generations of both semiconductor lithography and optical data storage are at the technological limits of resolution. Although these applications are at opposite ends of the cost spectrum, both industries share an uncertain future in the face of the diffraction limit. By combining 3D resolution superior to existing nonlinear absorption methods with the high sensitivity of photo-resist, the proposed lithography method has the potential to transform optoelectronic micro- and nano-fabrication across a broad spectrum of technologies.Broader ImpactThe research will be integrated into education via the development of an undergraduate optics sequence featuring senior-level design, fabrication and test of 3D optoelectronic and nanophotonic circuitry via software-controlled lithography and self-developing materials. This sequence will be founded on teaching methods featuring design as the core skill of engineering
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SitS NSF-UKRI: Phytoelectronic Soil Sensing
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批准号:1935594
-
项目类别:Standard Grant
-
资助金额:$79.94万
-
财政年份:2020
-
负责人:Robert McLeod
-
依托单位:
GOALI: Projection Stereolithography of Gradient Viscoelastic Polymer Nanocomposites
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批准号:1826454
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项目类别:Standard Grant
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资助金额:$39.92万
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财政年份:2018
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负责人:Robert McLeod
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依托单位:
Precision Organic Electrochemical Transistors for Single-Cell Electrophysiology
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批准号:1509909
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项目类别:Standard Grant
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资助金额:$39.0万
-
财政年份:2015
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负责人:Robert McLeod
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依托单位:
GOALI: Holographic Passive Solar Concentration and Lighting
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批准号:1307918
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项目类别:Standard Grant
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资助金额:$37.46万
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财政年份:2013
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负责人:Robert McLeod
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依托单位:
EAGER: Shared Materials Plotter for Organic Robotics
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批准号:1243871
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:2012
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负责人:Robert McLeod
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依托单位:
TCHCS: Hybrid RF/Optical ICs for High-Bandwidth Spread-Spectrum Communications
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批准号:0636650
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Robert McLeod
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依托单位:
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