Investigation of the influence of surface treatments on amorphous zinc oxide films, processed at temperatures around 120°C, to control the transport energy levels and charge transport properties (e.g. switch n- to p-type) for the application in photovolta

该项目的目的是分析和评估非晶氧化锌（a-ZnO）和其他表面控制氧化锌层，在120°C左右的温度下加工，作为光伏，电致发光和晶体管器件中的可调谐构建块。本研究将涵盖以下问题：-分析由铵基前驱体溶液构建的本质n掺杂a-ZnO薄膜的输运能级-通过渗透和组装供电子和接受电子的有机吸附剂进行后处理。分析了在隔离、半导体和导电之间切换薄膜性能的可能性——氮对硫阴离子取代的a-ZnO中掺杂了以下问题：——用硫钝化a-ZnO表面，以最大限度地减少表面态的高密度（与晶体ZnO （c-ZnO）相比）——分别影响受体迁移到间隙位置和受体自我补偿：a-ZnO与c-ZnO-掺杂剂在a-ZnO中的溶解度（比较c-ZnO）- a-ZnO中的受体活化能：ZnS与c-ZnO的比较和c-ZnO中的位错-使用定制的a-ZnO层制备电致发光，光伏和晶体管器件的制备和表征。

Aim of the project is the analysis and evaluation of amorphous ZnO (a-ZnO) and other surface governed ZnO layers, processed at temperatures around 120°C, as a tunable building block in photovoltaic-, electroluminescence-, and transistor devices. The research will cover the following issues:- Analysis of the transport energy levels in intrinsically n-doped a-ZnO thin films, build from ammonium based precursor solution- Post treatment via infiltration and assembling with electron donating and accepting organic adsorbates. Analysis of the possibilities in switching the film properties between isolating, semiconducting, and conducting- Nitrogen p-doping in sulfur anionic substituted a-ZnO with respect to the following issues:-- Passivation of the a-ZnO surface with sulfur to minimize the high density of surface states (comparison to crystalline ZnO (c-ZnO))-- Influence of acceptor migration to the interstitial position and acceptor self compensation, respectively: a-ZnO vs. c-ZnO-- Solubility of the dopant in a-ZnO (comparison c-ZnO)-- Acceptor activation energies in a-ZnO:ZnS in comparison to c-ZnO and dislocations in c-ZnO- Fabrication and characterization of electroluminescent-, photovoltaic, and transistor devices using the tailored a-ZnO layers.