Studies of the Growth and Electronic Properties of Epitaxial Graphene

技术摘要：太赫兹石墨烯电子技术的发展需要解决各种基本问题。该项目将在SiC上使用外延石墨烯作为一个前所未有的平台来回答这些问题。这部作品分为三部分。在第一组实验中，将使用x射线散射对高压炉环境下的生长动力学进行首次研究，从而更好地了解石墨烯的生长。在第二部分的研究中，将利用外延石墨烯的模式性来生长大面积的石墨烯纳米带阵列。这些阵列将首次允许对宽度相关的间隙进行光发射研究。最后，带状阵列将允许各种吸附剂侧扩散到石墨烯- sic界面。这项工作将允许对石墨烯带的补偿掺杂进行控制实验，以克服SiC的电荷转移。研究生和本科生不仅将学习各种高度专业化的实验技术，而且他们也将有机会成为石墨烯电子开发的前沿研究人员。摘要：美国电子工业的竞争优势要求解决硅基电子产品即将结束的问题。外延石墨烯提供了一个严肃的承诺，大大超越硅，并导致超高速电子。虽然外延石墨烯是一种激进的电子材料，但在石墨烯进入商业或军事系统之前，它需要新的器件设计、生长方法和材料挑战来理解和测试。在这个项目下进行的研究解决了这些挑战。第一个了解石墨烯在高压炉环境下生长的研究将进行。研究将涉及生产超薄石墨烯带的新技术，这将有助于研究这种新材料独特的电子特性。参与这项研究的研究生和本科生不仅将学习各种高度专业化的实验技术，而且他们也将有机会成为石墨烯电子发展的前沿研究人员。这些训练有素的劳动力将使美国继续在全球电子工业中保持领先地位。

Technical Abstract:The development of terahertz graphene electronics requires a variety of fundamental questions to be addressed. This project will use epitaxial graphene on SiC as an unprecedented platform to answer these questions. The work is broken into three parts. In the first set of experiments, the very first studies of growth kinetics in a high-pressure furnace environment using x-ray scattering will be carried out and lead to a better understanding of graphene growth. In the second part of the research, the patternabilty of epitaxial graphene will be exploited to grow large area arrays of graphene nano-ribbons. These arrays will allow, for the first time, photoemission studies of the width dependent gap. Finally, the ribbon arrays will allow various adsorbents to be side diffused into the graphene-SiC interface. This work will allow controlled experiments on compensation doping of graphene ribbons to overcome charge transfer from the SiC. Graduate and undergraduate students will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. Non-Technical Abstract:The competitive advantage of the US electronics industry requires a solution for the approaching end of silicon-based electronics. Epitaxial graphene offers a serious promise to drastically surpass silicon and lead to ultra high-speed electronics. While epitaxial graphene is a radical electronics material, it requires novel device designs, growth methods and materials challenges to be understood and tested before graphene enters commercial or military systems. The research carried out under this program addresses these challenges. The very first studies to understand graphene growth in a high-pressure furnace environment will be carried out. Research will involve new techniques to produce ultra thin graphene ribbons that will allow studies of this new material's unique electronic properties. Graduate and undergraduate students participating in this research will not only learn a variety of highly specialized experimental techniques, but they will also have the opportunity to become forefront researchers in graphene electronics development. This highly trained workforce will allow the US to continue its lead in the Global electronics industry.