Low Pressure Chemical Vapour Deposition Growth of Graphene for Electronic Component Applications**

石墨烯因其前所未有的材料性能和对微电子器件、纳米材料等应用的潜在影响而引起了全球的关注。到目前为止，许多研究都依赖于小面积的剥离石墨烯，这是一种无法大规模制造设备的方法。在过去的几年里，化学气相沉积(CVD)制备大面积石墨烯在迁移率、颗粒尺寸和成本方面都有所改善，但CVD石墨烯的生长仍有很大的改进空间。该项目是肯尼迪实验室和滑铁卢大学的合作项目，旨在探索低压CVD作为一种在各种衬底材料上生长高质量、大面积石墨烯的方法。成功的结果将使加拿大成为工业质量石墨烯的来源地，这将使工业和学术部门的新技术开发成为可能。

Graphene has attracted global attention for its unprecedented material performance and potential impact on microelectronic devices, nano-materials, and other applications. Much research to date relies on small-area exfoliated graphene, which is a prohibitive method for scaled-up manufacturing of devices. Deposition of large-area graphene by chemical vapour deposition (CVD) has improved over the last few years with respect to mobility, grain size and cost, yet there is significant room for improvement in CVD graphene growth. This project is a collaboration between Kennedy Labs and the University of Waterloo that aims to explore low-pressure CVD as a means for growing high-quality, large-area graphene on a variety of substrate materials. A successful outcome will establish Canada as a source of industrial-quality graphene that will enable new technology development in both the industrial and academic sectors.