Low Pressure Chemical Vapour Deposition Growth of Graphene for Electronic Component Applications**

用于电子元件应用的石墨烯低压化学气相沉积生长**

• 批准号: 537418-2018
• 负责人: Baugh, Jonathan
• 金额: $ 1.82万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=644804
• 关键词: Low; Pressure; Chemical; Vapour; Deposition

Graphene has attracted global attention for its unprecedented material performance and potential impact on microelectronic devices, nano-materials, and other applications. Much research to date relies on small-area exfoliated graphene, which is a prohibitive method for scaled-up manufacturing of devices. Deposition of large-area graphene by chemical vapour deposition (CVD) has improved over the last few years with respect to mobility, grain size and cost, yet there is significant room for improvement in CVD graphene growth. This project is a collaboration between Kennedy Labs and the University of Waterloo that aims to explore low-pressure CVD as a means for growing high-quality, large-area graphene on a variety of substrate materials. A successful outcome will establish Canada as a source of industrial-quality graphene that will enable new technology development in both the industrial and academic sectors.

石墨烯因其前所未有的材料性能以及对微电子器件、纳米材料和其他应用的潜在影响而引起了全球的关注。迄今为止，许多研究都依赖于小面积剥离石墨烯，这是一种无法大规模制造设备的方法。过去几年，通过化学气相沉积 (CVD) 沉积大面积石墨烯在迁移率、晶粒尺寸和成本方面都有所改善，但 CVD 石墨烯生长仍有很大的改进空间。该项目是肯尼迪实验室和滑铁卢大学之间的合作项目，旨在探索低压 CVD 作为在各种基材材料上生长高质量、大面积石墨烯的一种手段。成功的结果将使加拿大成为工业级石墨烯的来源地，从而促进工业和学术领域的新技术开发。