SBIR Phase II: High quality, low cost bulk gallium nitride substrates

这个小型企业创新研究（SBIR）二期项目旨在开发一种可扩展、紧凑和快速的氨热方法来生长高质量、低成本的大块氮化镓（GaN）衬底。一种新型装置，可扩展到大容量，成本适中，将用于实现高压，高温条件和生长单晶氮化镓。该项目预计将展示超纯原料的合成和高质量块状GaN晶体的生长，这些晶体具有优异的结晶度，提高了透明度，直径至少为1英寸，并且能够快速扩大到更大的尺寸。该项目的更广泛/商业影响将是提供高质量和显着降低成本的GaN衬底的潜力，这可能使其应用于下一代显示器，包括发光二极管（led），绿色和蓝色激光二极管等。目前仅用于405nm激光二极管并通过气相技术生长的大块GaN衬底，预计2010年市场规模将达到4.05亿美元。低成本和高质量的大块GaN衬底的可用性有望提高GaN基led的效率并降低成本，这将大大降低电力消耗。

This Small Business Innovation Research (SBIR) Phase II project aims to develop a scalable, compact and rapid ammonothermal method to grow high-quality, low-cost bulk gallium nitride (GaN) substrates. A novel apparatus that is scalable to large volumes at modest cost will be utilized to achieve high-pressure, high-temperature conditions and grow single-crystal GaN. This project is expected to demonstrate the synthesis of ultrapure raw material and the growth of high-quality bulk GaN crystals with excellent crystallinity, improved transparency, a diameter of at least 1 inch and a process capable of rapid scale-up to larger sizes.The broader/commercial impact of this project will be the potential to offer high-quality and significantly lower cost GaN substrates, which may enable their applications in next generation displays including light-emitting diodes (LEDs), green and blue laser diodes etc. Bulk GaN substrates, currently in use for 405 nm laser diodes only and grown by a vapor-phase technique, are projected to be a $405 million market in 2010. The availability of low-cost and high-quality bulk GaN substrates is anticipated to improve efficiency and reduce cost of GaN-based LEDs, which will enable a large reduction in electrical power consumption.