International: US-China IRES with Collaborative Research on Nano Crystal Dot Electrostatic Discharge Protection for Integrated Circuits

该奖项支持在中国的国际学生研究经验（IRES）项目。参与的本科生将从事纳米级晶体量子点（NC-QD）集成电路（IC）的研究，特别是对亚90纳米节点的静电放电故障机制和保护方法。这是半导体行业的一个重要和关键的研究领域。 位于滨江的加州大学的研究小组将与中国的清华大学、电子科技大学、上海交通大学和华中科技大学合作。 在三年的时间里，每年将有五名美国本科生参与这个国际合作研究项目。 每年为期三个月的IRES项目包括两个阶段：在北京清华大学学习六周，在另一个中国城市的第二所大学学习六周。IRES的活动包括通过设计和制造，联合教育会议，全球工业培训和接触中国多元化文化和社会环境的IC可靠性研究项目。IRES研讨会计划在每个阶段在中国的主办机构和国内为参与的本科生介绍他们的IRES经验。学生在中国大学获得的语言培训和文化经验将使他们能够在未来的职业生涯中在全球环境中进行有效的互动。

This award supports an International Research Experiences for Students (IRES) project in China. Participating undergraduate students will engage in research on nano-scale crystal quantum-dot (NC-QD) integrated circuits (ICs) and particularly on electrostatic-discharge failure mechanisms and protection methods for sub-90nm nodes. This is an important and critical research area for the semiconductor industry. The research group in University of California at Riverside will collaborate with Tsinghua University, University of Electronic S&T, Shanghai Jiaotong University, and Huazhong University of S&T, all in China. A total of five US undergraduate students will be involved in this international collaborative research project in each of three years. The annual three-month IRES program consists of two phases: six weeks at Tsinghua University in Beijing and six weeks at a second university in a different Chinese city. The IRES activities include research projects on IC reliability through design and fabrication, joint education sessions, global industrial training and exposure to diversified cultures and social settings in China. IRES seminars are planned in each phase at the host Chinese institutions and back at home for the participating undergraduate students to present their IRES experiences. The language training and cultural experience gained by the students at universities in China will enable them to interact effectively in their future careers in a global setting.