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Collaborative Research: Integrated Graphene NEMS Switch ESD Protection for Low-Power ICs

Collaborative Research: Integrated Graphene NEMS Switch ESD Protection for Low-Power ICs
合作研究:低功耗 IC 的集成石墨烯 NEMS 开关 ESD 保护
批准号:
1405059
负责人:
Albert Wang
金额:
$30.17万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-09-01 至 2017-08-31

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中文摘要
翻译
ECCS道具吗。提案题目:合作研究:用于节能集成电路的石墨烯NEMS开关ESD保护电路奖励目标:开发基于石墨烯的机械开关,作为下一代节能集成电路静电放电故障的未来可靠性解决方案。静电放电(ESD)故障被认为是集成电路和电子系统最严重的可靠性问题之一,每年给电子行业造成数十亿美元的收入损失。基本上,任何电子系统,包括智能手机、平板电脑、个人电脑、电视机、无线路由器、植入式生物医学设备等,如果没有适当和强大的ESD保护措施,都无法在市场上生存,因为在现实世界中,不可避免的ESD浪涌对任何电子产品都是一个活生生的威胁。随着微电子技术的不断进步,其特征尺寸的大幅缩小和集成度的提高,利用有源电子器件的传统ESD保护解决方案已经持续了十年之久,因为任何与ESD保护器件相关的固有寄生效应都会显著降低ic和系统的性能。例如,与ESD结构相关的泄漏电流对于下一代节能电子产品来说将变得相对过高。提出了一种全新的ESD保护概念,并将开发革命性的基于石墨烯的机械开关结构,作为潜在的ESD保护解决方案。由于其机械性质,石墨烯开关将为集成电路提供足够的ESD保护,而不会产生固有的泄漏电流,这将使下一代节能集成电路和系统成为可能,通俗地说,这意味着更低的功耗,从而为电子产品提供更长的电池时间。如果成功,新型石墨烯开关ESD保护解决方案将对人类产生立竿见影的影响,帮助创建一个更绿色的社会。加州大学洛杉矶分校和加州大学洛杉矶分校的合作将推动电气工程和材料科学之间的跨学科研究超越校园界限。该产学研合作计划将对美国微电子产业产生巨大的社会影响,包括技术和经济效益。综合研究教育活动建议让学生接触当代微/纳米电子可靠性研究和微电子工业,以及为美国培训技术和具有全球竞争力的劳动力。鼓励少数族裔学生参与相关研究活动。摘要随着集成电路技术向纳米级发展,静电放电(ESD)失效已成为集成电路和系统面临的最严重的可靠性问题,这就需要对片内ESD进行保护。同时,新兴的纳米技术也需要足够的ESD保护,以实现可靠的实际应用。几十年来,传统的ESD保护依赖于基于pn结的结构,这种结构不再适用于节能集成电路和纳米电子产品。特别是,对于超低功耗和高可靠的ic,例如用于绿色系统的节能ic,包括移动电子和极其可靠的植入式生物医学设备等,静电引起的泄漏变得越来越难以忍受。石墨烯具有超强的导电性和导热性,以及薄层和机械强度,是制造新型ESD保护结构的理想材料。加利福尼亚大学的研究人员提出了一种革命性的石墨烯NEMS(纳米机电系统)开关ESD保护概念,作为绿色ic的潜在集成可靠性设计(DfR)解决方案,以解决芯片上出现的ESD保护挑战。本研究将1)开发用于节能集成电路的石墨烯超级ESD线放电装置,2)开发用于超低功耗集成电路的石墨烯NEMS开关ESD保护机制和结构,3)开发兼容cmos的石墨烯ESD保护结构制造工艺,4)开发用于集成电路设计演示的石墨烯ESD保护器件模型。其新颖之处在于充分利用石墨烯的弹道电和热输运特性,以及超强的机械强度特性,为下一代节能集成电路实现零泄漏、低寄生和强大的ESD保护。
英文摘要
ECCS Prop. No. 1405059Proposal Title: Collaborative Research: Graphene NEMS Switch ESD Protection Circuit for Energy-Efficient ICsAward GoalDeveloping graphene-based mechanical switches as a future reliability solution to electrostatic discharge failures to next-generation energy-efficient integrated circuitsNontechnical AbstractAside from the performance, reliability is the key concern to any integrated circuits (ICs) and systems. Electrostatic discharge (ESD) failure is regarded as one of the most significant reliability problems to ICs and electronic systems, which results in billions of dollars of revenue losses each year to the electronic industry. Essentially, no electronic systems, including smartphones, tablets, personal computers, television sets, wireless routers, implantable biomedical devices, etc., may survive the market without proper and robust ESD protection measures in place, because the inevitable ESD surges represent a live threat to any electronic products due to damages in real world. As microelectronics technologies continue advance as represented by the aggressive scaling down of its feature sizes and higher integration level, the decade-long traditional ESD protection solutions utilizing active electronic devices can no longer be acceptable because the inherent parasitic effects associated with any ESD protection devices will significantly degrade the performance of ICs and systems. For example, the leakage current associated with an ESD structure will become relatively too high for the next-generation energy-efficient electronic products. A completely new ESD protection concept is proposed and revolutionary graphene-based mechanical switch structures will be developed in this work as a potential ESD protection solution. Because of its mechanical nature, the graphene switches will provide adequate ESD protection to ICs without inherent leakage current, which shall enable next-generation energy-efficient ICs and systems that, in plain language, translates into lower power consumption, hence, longer battery time for an electronic product. If successful, the novel graphene switch ESD protection solution shall make immediate impacts to the humanity by helping to create a greener society.The UCR-UCLA collaboration will boost interdisciplinary research between Electrical Engineering and Materials Science beyond the campus boundaries. The academic-industrial collaboration plan will have great social impacts, including technical and economic benefits to the American Microelectronics industry. Integrated research-education activities are proposed to expose students to contemporary micro/nano-electronics reliability research and the Microelectronics industry, as well as to train technically and globally competent workforces for the America. Underrepresented minority students are encouraged to involve in related research activities.Technical AbstractElectrostatic Discharge (ESD) failure is becoming the most devastating reliability problem to integrated circuits (IC) and systems as IC technologies advance into nano scale, which requires on-chip ESD protection. Meanwhile, emerging nano technologies also requires adequate ESD protection to enable reliable real-world applications. For decades, traditional ESD protection relies on PN-junction-based structures, which no longer work for energy-efficient ICs and nano electronics. Particularly, ESD-induced leakage becomes increasingly intolerable to ultra-low-power and high-reliable ICs, such as energy-efficient ICs for green systems including mobile electronics and extremely-reliable implantable biomedical devices, etc. Graphene, with super electrical and thermal conductivity, as well as thin layer and mechanical strength, is ideal for making a new breed of ESD protection structures. The investigators at the University of California propose a revolutionary graphene NEMS (nano electromechanical system) switch ESD protection concept as a potential integrated design-for-reliability (DfR) solution for green ICs to address the emerging on-chip ESD protection challenges. This research will 1) develop Graphene super ESD line discharger for energy-efficient ICs, 2) develop Graphene NEMS switch ESD protection mechanism and structures for ultra-low-power ICs, 3) develop CMOS-compatible Graphene ESD protection structure fabrication process, and 4) develop Graphene-based ESD protection device models for IC design demonstration. The novelty is to take full use of graphene ballistic electrical and thermal transport properties, and super mechanical strength feature, to achieve zero-leakage, low-parasitic and robust ESD protection for next-generation energy-efficient ICs.
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EAGER: Exploring Graphene Mechanical Switch for Future RF ICs
  • 批准号:
    2302688
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.0万
  • 财政年份:
    2023
  • 负责人:
    Albert Wang
  • 依托单位:
High-Reliable LED Visible Light Communications and Positioning
  • 批准号:
    1555903
  • 项目类别:
    Standard Grant
  • 资助金额:
    $24.93万
  • 财政年份:
    2016
  • 负责人:
    Albert Wang
  • 依托单位:
Planning Grant: I/UCRC for Integrated Design-for-Reliability for Electronics
  • 批准号:
    1160865
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.45万
  • 财政年份:
    2012
  • 负责人:
    Albert Wang
  • 依托单位:
International: US-China IRES with Collaborative Research on Nano Crystal Dot Electrostatic Discharge Protection for Integrated Circuits
  • 批准号:
    1110838
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2011
  • 负责人:
    Albert Wang
  • 依托单位:
国内基金
海外基金
Research on Quantum Field Theory without a Lagrangian Description
  • 批准号:
    24ZR1403900
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    SATOSHI NAWATA
  • 依托单位:
Cell Research
Cell Research
Cell Research (细胞研究)