MRI: Acquisition of a Molecular Beam Epitaxy Chamber for Quantum-Engineered Structures and Devices
MRI: Acquisition of a Molecular Beam Epitaxy Chamber for Quantum-Engineered Structures and Devices
批准号:
1229678
负责人:
Michael Santos
金额:
$81.3万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-09-01 至 2016-08-31
中文摘要
该奖项授予俄克拉何马大学是为了获得最先进的分子束外延室,以加速开发含锑材料的广泛科学和技术重要应用的进展。锑化物材料通常具有相对较窄的带隙、较小的有效电子质量和较强的自旋轨道耦合。基于InAs和GaSb量子阱之间ii型跃迁的带间级联结构将进一步发展,用于中红外激光器、光电探测器和热光伏器件。以锑化物化合物作为点或基质材料的量子点结构是利用中间能带吸收或多激子产生的太阳能电池的候选材料。利用强自旋轨道耦合和约束效应可以在量子约束Sb薄膜中形成一种新的三维拓扑绝缘体。改进的InSb量子阱结构将促进电子自旋效应的进一步研究,并可能形成新的拓扑超导体态。在光电和光电探测器应用中,将研究窄间隙材料中稀氮的影响。分子束外延室将用于培养当代生长技术的学生,并将为学习物理和工程的学生创造新的研究机会。纳米技术向K-12学生、初中和高中教师、本科生和老年人的推广将通过获得新的锑化物生长室而增强的专业知识而丰富。
英文摘要
This award to the University of Oklahoma is for the acquisition of a state-of-the-art molecular beam epitaxy chamber to accelerate progress in developing a wide range of scientific and technologically important applications for materials containing antimony (Sb). Antimonide materials typically display a relatively narrow band gap, small effective electronic mass, and strong spin-orbit coupling. Interband cascade structures based on the type-II transition between InAs and GaSb quantum wells will be further developed for applications as mid-infrared lasers, photodetectors, and thermophotovoltaic devices. Quantum-dot structures with antimonide compounds as the material for either the dots or the matrix are candidates for solar cells that exploit intermediate band absorption or multi-exciton generation. Exploitation of strong-spin orbit coupling and confinement effects may lead to a new three-dimensional topological insulator in quantum-confined Sb films. Improved InSb quantum-well structures will facilitate further studies of electron spin effects and may enable formation of novel topological superconductor states. The effects of dilute amounts of nitrogen in narrow gap materials will be studied for photovoltaic and photodetector applications. The molecular beam epitaxy chamber will be used for the training of students in contemporary growth techniques and will create new research opportunities for students studying physics and engineering. Nanotechnology outreach to K-12 students, middle and high school teachers, undergraduates, and senior citizens will be enriched by the enhanced expertise that will result from the acquisition of a new chamber for antimonide growth.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Conference: Support for Student Participation at the 16th International Conference on Mid-infrared Optoelectronics: Materials and Devices
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批准号:2310806
-
项目类别:Standard Grant
-
资助金额:$1.0万
-
财政年份:2023
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负责人:Michael Santos
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依托单位:
Topological and Spin Transport Experiments in Narrow Bandgap Materials
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批准号:1207537
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项目类别:Continuing Grant
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资助金额:$51.0万
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财政年份:2012
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负责人:Michael Santos
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依托单位:
InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments
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批准号:0808086
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项目类别:Continuing Grant
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资助金额:$49.52万
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财政年份:2008
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负责人:Michael Santos
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依托单位:
InSb Heterostructures for Spin and Quantum Electronic Experiments
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批准号:0510056
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Michael Santos
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依托单位:
IMR: Acquisition of Fourier Transform Infrared Spectrometer for Research and Education on Spintronics and Semiconductor Nanostructures
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批准号:0415161
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项目类别:Standard Grant
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资助金额:$9.1万
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财政年份:2004
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负责人:Michael Santos
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依托单位:
The Earliest Generations of Stars and Galaxies in the Universe
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批准号:0302148
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项目类别:Standard Grant
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资助金额:$13.93万
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财政年份:2003
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负责人:Michael Santos
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依托单位:
Spin and Other Electronic Properties of InSb Quantum Wells
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批准号:0209371
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项目类别:Continuing Grant
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资助金额:$43.5万
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财政年份:2002
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负责人:Michael Santos
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依托单位:
Electronic Properties of Strained Narrow-Gap Quantum Wells
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批准号:9973167
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项目类别:Continuing Grant
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资助金额:$35.0万
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财政年份:1999
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负责人:Michael Santos
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依托单位:
CAREER: Electronic Device Applications for InSb-Based Heterostructures
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批准号:9733966
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:1998
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负责人:Michael Santos
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依托单位:
Electronic Properties and Growth of Novel InSb Based Quantum Wells
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批准号:9624699
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项目类别:Continuing Grant
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资助金额:$31.0万
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财政年份:1996
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负责人:Michael Santos
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依托单位:
RESEARCH INITIATION AWARD: Low-Disorder Two-Dimensional Electron Systems in InSb
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批准号:9410015
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:1994
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负责人:Michael Santos
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依托单位:
海外基金