Topological Insulator Hybrid Structures for Novel Optoelectronic Applications
Topological Insulator Hybrid Structures for Novel Optoelectronic Applications
批准号:
1306400
负责人:
Ki Wook Kim
金额:
$42.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-08-15 至 2018-01-31
中文摘要
目的:本计划的目的是利用拓扑绝缘体为基础的结构的光电应用的独特优势。具体而言,拓扑绝缘体-磁性材料界面处的强磁电相互作用和随后的能带工程是关键焦点,因为它们可以促进对光信号的定制响应,为以前无法实现的性能提供理想的环境,例如极端灵敏度检测。理论和实验相结合的努力旨在实现新型拓扑绝缘体材料和分层异质结构的合成、制造和分析,以及上级器件功能的演示。知识上的优点是,该研究为超越当前技术水平的可实现的基于拓扑绝缘体的器件提供了基础。通过域匹配外延的范例,该努力追求在硅兼容平台上的界面处具有原子均匀性的外延拓扑绝缘体/铁磁绝缘体混合结构的合成。 靶材料包括Bi 2Se 3和新兴的立方候选物,如反钙钛矿Sr 3SnO和半Heusler LuPtSb。调查还开发了拓扑绝缘体属性和各种太赫兹探测器designs.Broader影响的光响应特性的基本理论认识:更广泛的影响是研究生和本科生的教育/培训,除了先进的设备开发与技术的重要性。 特别重要的是,通过与当地历史悠久的黑人学院和大学建立密切联系,参与和招收少数民族学生。 该项目由电气、通信和网络系统部(ECCS)的电子、光子和磁性器件项目(EPMD)和材料研究部(DMR)的电子和光子材料项目(EPM)共同资助。
英文摘要
Objective: The objective of this program is to exploit unique advantages of topological insulator based structures for optoelectronic applications. Specifically, the strong magnetoelectric interaction at the topological insulator-magnetic material interface and subsequent band engineering is the key focus as they can facilitate tailored response to an optical signal, offering an ideal environment for previously unattainable performances such as extreme sensitivity detection. The combined theoretical and experimental effort aims to achieve synthesis, fabrication, and analysis of novel topological insulator materials and layered heterostructures as well as demonstration of superior device functionalities.Intellectual Merit: The intellectual merit is that the investigation presents a basis for realizable topological insulator based devices beyond the current state-of-the art. Through the paradigm of domain matching epitaxy, the effort pursues synthesis of epitaxial topological insulator/ferromagnetic insulator hybrid structures with atomistic uniformity at the interface on a silicon compatible platform. The target materials include both Bi2Se3 and emerging cubic candidates such as inverse perovskite Sr3SnO and half-Heusler LuPtSb. The investigation also develops fundamental theoretical understanding of topological insulator properties and photo-response characteristics of various terahertz detector designs.Broader Impacts: The broader impacts are the education/training of graduate and undergraduate students in addition to advanced device development with technological importance. Of particular significance is participation and recruiting of minority students by fostering strong ties to local historically black colleges and universities. The outreach is also pursued through ASM Materials Camp, a successful annual summer event for high school students, as well as the online distance education network.This project is jointly funded by the Electronics, Photonics, and Magnetic Devices Program (EPMD) in the Division of Electrical, Communications and Cyber Systems (ECCS) and by the Electronic and Photonic Materials Program (EPM) in the Division of Materials Research (DMR).
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