Funding for Student Participation at the 20th International Conference on Ion Implantation Technology, June/July in Portland, Oregon

该项目的目的是提高学生在第20届离子注入技术国际会议（IIT）的参与度，该会议将于2014年6月/ 7月在俄勒冈州波特兰举行。IIT是唯一一个讨论离子注入技术的最新和未来发展的会议。业界人士和学术研究人员广泛参加了这次会议。然而，学生的参与往往很少，即使它提供了极好的机会，让学生扩大他们的知识离子注入掺杂和晶圆加工技术。本次会议的参与者将与学生分享他们的知识，会议在技术课程之前举办了一个信息丰富的学校。本提案旨在通过为美国大学学生提供差旅费和会议及会议学校注册费支持，提高学生对本次会议的参与度。该提案的资金将有助于提高未来美国半导体行业设备制造工厂研发所需劳动力的质量，这对美国经济至关重要。该项目为研究生提供了一个机会，以扩展他们对纳米尺寸器件制造至关重要的最新离子注入技术的知识。离子注入是纳米级硅和其他半导体器件唯一可行的选择性区域掺杂技术。这也是在纳米尺度范围内改变材料性质的唯一可重复的技术。由于离子植入设备的高成本，大学缺乏可用的设备。目前的研究生是未来的劳动力，他们没有接受教育来面对离子注入技术带来的挑战。两年一度的IIT是解决这些未来需求的唯一会议，工业界的半导体研究人员和设备制造商广泛参加。来自NSF的资金将用于支持大约8名学生参加会议和会议学校的学生注册费和学生旅费。会议主题包括：新兴研究器件和材料，结和接触的形成，通过离子注入和/或热处理对精密材料进行改性，离子注入和新掺杂技术，快速热处理，以及平面/非平面CMOS器件。届时还将邀请知名专家就晶体管缩放、新材料和先进器件的结制工艺技术进行演讲。

The objective of this project is to enhance student participation at the biennial 20th International Conference on Ion Implantation Technology (IIT), which will be held in June/July 2014 at Portland, Oregon. The IIT is the only conference dealing with the state-of-the-art and future developments in ion-implantation technology. This conference is widely attended by industry personnel and academic researchers. However, student participation is often sparse even though it offers excellent opportunities for the students to broaden their knowledge of ion implantation doping and wafer processing technologies. The participants at this conference will share their knowledge with the students and the conference holds a highly informative school preceding the technical program. This proposal aims at improving student participation at this conference by providing travel expense and conference and conference school registration fee support for students at US universities. Funding of this proposal will help to improve the quality of future workforce needed pursue careers in US semiconductor industry R&D in device manufacturing plants, which is vital for US economy. The project provides an opportunity for graduate students to expand their knowledge concerning state-of-the-art ion-implantation technologies which are critical for fabrication of nano-dimensional devices. Ion-implantation is the only viable selective area doping technique available for nanoscale silicon and other semiconductor devices. It is also the only reproducible technique available for altering the material properties in the nanoscale range. Due to the high cost of ion-implantation equipment, there is a lack of availability of facilities at universities. Current graduate students, who are the future workforce, are not being educated to face the challenges offered by the ion-implantation technology. The biennial IIT is the only conference that addresses these future needs and is widely attended by semiconductor researchers in the industry and by equipment manufacturers. Funding from the NSF will be used to support student registration fee for the conference and conference school and student travel for participation of about 8 students. Conference topics include: Emerging Research Devices and Materials, Junction and Contact formation, Precision Materials Modification by ion implantation and/or thermal treatment, ion implantation and new doping techniques, Rapid Thermal Processing, and Planar/ non-planar CMOS devices. There will also be invited talks by well-known experts addressing Transistor Scaling and New Materials and Junction Process Technology for Advanced Devices.